GWM160-0055X1-SL

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The GWM160-0055X1-SL is a power metal-oxide-semiconductor field-effect transistor (MOSFET) array, specifically designed to be used in high-power electronic applications. The MOSFETs in the array are fabricated with N-type technology and have a common source, making it suitable for use in both high and low-side power switching applications. The GWM160-0055X1-SL has three-terminal positive and seven-terminal negative. It is particularly suited for use in high-frequency switch circuits, allowing higher frequencies to be operated without excessive junction heating and without sacrificing performance.

A MOSFET is a unipolar, voltage-controlled device that can be used to isolate voltage. This transistor has a gate, a source, and a drain. A gate-source voltage is applied to the gate in order to control whether current passes through the device. When the gate-source voltage is high (VGS > VT), the device is “ON” and a current can flow from the drain to the source. When the gate-source voltage is low (VGS < VT), the device is “OFF” and no current can flow between the drain and the source. The gate voltage threshold VT is usually equal to 0.7V.

When combined in an array form, MOSFETs create an effective power switching circuit that is able to handle high currents and voltages. In such circuits, the source of each MOSFET is connected to form a common source connection. When the gate of the circuit is “ON”, current can flow through the connected MOSFETs. When the gate is “OFF”, current flow through the MOSFETs is shut off. This type of circuit is frequently used in power control applications, where the device can switch high currents and voltages without sacrificing performance.

The GWM160-0055X1-SL MOSFET array from Future Electronics is particularly suited for use in high-frequency switch circuits. This type of circuit is commonly used in a wide range of applications, including the control of power in motor drives, high-power switching for industrial applications, and DC-DC conversion circuits. Due to the common source connection, the GWM160-0055X1-SL is also ideal for use in both high and low-side power switching applications. It can also be used in motor control systems, providing both AC and DC motors with reliable and efficient power switching.

Due to its high-frequency resistance and low on-state resistance, the GWM160-0055X1-SL can help reduce system power losses. It can also be used to reduce switching times in a variety of applications, further increasing efficiency. The device’s three-terminal positive and seven-terminal negative form factor facilitates easy and reliable PCB mounting. Furthermore, its silicone-gel encapsulation helps protect it from impact, vibration, and temperature extremes.

In summary, the GWM160-0055X1-SL is an ideal choice for high-power applications. Its low on-state resistance and high-frequency resistance make it suitable for use in high-frequency switch circuits, allowing higher frequencies to be operated without sacrificing performance. The device also has a small form factor and is encapsulated in silicone-gel to provide protection against impact, vibration, and temperature extremes. The GWM160-0055X1-SL is an indispensable component for various types of motor control and power control applications.

The specific data is subject to PDF, and the above content is for reference