GWM100-01X1-SLSAM

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	6 N-Channel (3-Phase Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	90A
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	--
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	17-SMD, Flat Leads
Supplier Device Package:	ISOPLUS-DIL™
Base Part Number:	GWM100

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<p>The GWM100-01X1-SLSAM is a type of field-effect transistor (FET) array that is designed for an array of low-power, high-speed applications. It is applicable in digital circuits and can be used for a variety of applications such as switching and analog circuits. This particular FET array consists of two devices, each with a maximum of fifteen independent control lines and sixteen power output pins.</p><p>The GWM100-01X1-SLSAM is a dual-channel device, meaning that it contains two individual blocks of integration and switching circuits that can be adapted for a wide range of applications. Each block contains sixteen power output pins, which are used to control the drive current to the outputs in both the channels. The two blocks have been connected to a common gate and operate as a single integrated circuit.</p><p>The FET array works by using the electric field of a metal–oxide–semiconductor field-effect transistor (MOSFET). When the gate voltage of the device is applied, it modifies the width of the channel, and the current flows on that channel. The FET array comes equipped with internal data latch and level shifter, allowing it to be programmed easily and facilitating quick switching between source and drain. The device also utilizes a dedicated discrete logic circuit to control the switching between source and drain, while consuming very low power.</p><p>The GWM100-01X1-SLSAM is designed for applications that require a low on-resistance, low power consumption, fast switching speed, and an array of sixteen power output pins. It is used in digital circuits for high-speed switching, in voltage level shifting and adjustable voltage circuits, as well as in analog circuits such as high impedance switching.</p><p>The GWM100-01X1-SLSAM FET array can be used in applications that require a wide range of gate-source voltages and low-voltage supply voltages. It is suitable for low-voltage, high-current applications, and is therefore often used in battery operated systems such as those in mobile devices. Its low on-resistance allows for high current densities, enabling it to power high-power devices. In addition, the FET array’s high switching speed makes it ideal for applications that require high-speed data rate and responsive response to changes in its environment.</p><p>The FET array also allows for design flexibility, allowing the end user to adapt the device for a wide range of applications. It is available in a variety of package forms, including surface mount and leaded through-hole formats, allowing for easy integration into a range of system designs.</p><p>The GWM100-01X1-SLSAM is a versatile, reliable, and durable FET array, offering a range of features that make it well suited for applications that require fast, low-power switching, or low-voltage, high-current applications. It is suitable for low-voltage, high-current applications, as well as high-speed switching, and can be used in circuits for analog and digital as well as voltage level shifting and adjustable voltage circuits. With its low on-resistance, sixteen power output pins, low power consumption, and wide range of gate-to-source voltage, the GWM100-01X1-SLSAM is the ideal choice for a variety of applications.</p>

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