GWM100-01X1-SMDSAM Allicdata Electronics
Allicdata Part #:

GWM100-01X1-SMDSAM-ND

Manufacturer Part#:

GWM100-01X1-SMDSAM

Price: $ 18.28
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 6N-CH 100V 90A ISOPLUS
More Detail: Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 90A...
DataSheet: GWM100-01X1-SMDSAM datasheetGWM100-01X1-SMDSAM Datasheet/PDF
Quantity: 1000
1 +: $ 16.61940
Stock 1000Can Ship Immediately
$ 18.28
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL™
Base Part Number: GWM100
Description

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The GWM100-01X1-SMDSAM is an interface technology for circuits that process analog and digital signals. It is used in a wide range of applications, from medical instrumentation and telecommunications to communications and industrial control. This technology is based on an array configuration of field-effect transistors (FETs). The GWM100-01X1-SMDSAM is designed for low-power and high-speed operation and provides a higher level of performance compared to traditional single FET designs.

The GWM100-01X1-SMDSAM is a semiconductor device that is commonly referred to as an array of FETs. An array of FETs is constructed out of several FETs that are placed in close proximity to each other and then connected to a common gate. An array of FETs operates as a single integrated circuit that allows analog and digital signals to be processed efficiently and with greater precision than single FETs.

The primary advantages of the GWM100-01X1-SMDSAM are that it takes up very little board space and is highly configurable. It also has a high immunity to noise and can often operate at higher frequencies than conventional discrete FETs. The GWM100-01X1-SMDSAM also allows multiple functions to be integrated into a single device, which reduces the need for multiple discrete FETs.

The GWM100-01X1-SMDSAM works according to a universal principle. A VCC voltage is applied to the FETs which switches the gate current on and off. This switching of the gate current then controls the flow of electrons through the drain and source terminals. A fet can act as an amplifier because when the gate is switched on, a voltage is applied to the drain, which draws current from the source. Conversely, when the gate is switched off, the current is blocked from flowing. By using this principle, the GWM100-01X1-SMDSAM can control a wide variety of digital and analog signals.

The GWM100-01X1-SMDSAM has a wide range of applications, from medical electronics and instrumentation to communications and industrial control. As it can be used with a variety of other components, it is suitable for use in low-power, high-speed applications. In addition, the GWM100-01X1-SMDSAM can be used to drive various kinds of motors and actuators, making it a very versatile technology.

In summary, the GWM100-01X1-SMDSAM is a versatile interface technology for analog and digital signals. It is based on an array of FETs and offers a high level of performance and immunity to noise. It is suitable for a wide range of applications and is highly configurable, allowing multiple functions to be integrated into a single device. In addition, its switching principle facilitates the efficient processing of both digital and analog signals.

The specific data is subject to PDF, and the above content is for reference

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