GWM120-0075P3-SMD SAM

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	6 N-Channel (3-Phase Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	75V
Current - Continuous Drain (Id) @ 25°C:	118A
Rds On (Max) @ Id, Vgs:	5.5 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	--
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	17-SMD, Gull Wing
Supplier Device Package:	ISOPLUS-DIL™
Base Part Number:	GWM120

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<p>GWM120-0075P3-SMD SAM is a discrete four-channel field-effect transistor (FET) array, which belongs to the family of Transistors – FETs, MOSFETs – Arrays. This transistor array is built with two dual power MOSFETs. It allows the user to gain considerable savings in component counts, space and cost.</p><p>The GWM120-0075P3-SMD SAM is specifically designed to handle loads with a maximum power of 300 watts. It is an ideal solution for applications such as high-frequency DC-DC converters, DC-DC buck converters, and motor control applications due to its exceptional performance in high-side and low-side drive operations. It also offers low on-state resistance for deflection in power and efficiency as well as fast signaling.</p><p>The discrete FET array provides enhanced circuit protection and faster operation due to its built-in drain-to-source voltage detection, gate-to-drain voltage detection, and temperature monitoring. It also offers a wide operating temperature range of –55 to +170°C and an open drain short-circuit protection.</p><p>The GWM120-0075P3-SMD SAM comes in an LGA 7x7mm package which features a low profile of 1.1mm and a low total number of pins of 8. This makes it perfect for applications with limited space. The internal circuit of the device has been designed with a very high-speed switching time and low on-state resistance. It also offers good threshold voltage characteristics.</p><p>The working principle of the GWM120-0075P3-SMD SAM is based on field-effect transistor (FET) technology. FETs are three-terminal devices that consist of a source, gate and drain. A voltage applied to the gate of an FET causes it to either open or close its channel, based on the type of FET. This allows the transistors to act as a switch.</p><p>In the GWM120-0075P3-SMD SAM, two dual power MOSFETs are integrated together in a single package. When the voltage applied to the gate of the FETs is below a certain threshold, the device is in its off-state. On the other hand, when the voltage applied to the gate of the FETs is above the threshold, the device is in its on-state.</p><p>The GWM120-0075P3-SMD SAM is an ideal device for medium-power applications, such as DC-DC converters and motor control applications, due to its excellent performance in both high-side and low-side drive operations. It is a cost-effective choice due to its low on-state resistance, fast signaling, and small LGA package. Furthermore, it offers integrated protection features that guard against short-circuit, over-temperature and other faults.</p>

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