GWM100-01X1-SL

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The GWM100-01X1-SL is a power transistor array composed of four N-channel MOSFETs in a single package. This array is based on the latest HEXFET technology and is designed for high voltage, high current, and fast switching applications. It is designed with a low on-resistance to allow for an efficient power switching solution for a variety of applications, including DC/DC converters, radio frequency (RF) transmitters, and power supplies.

The GWM100-01X1-SL has an on-resistance of 20 ohms when it is in the on state. This low on-resistance allows for larger current passing through the array, which could not be achieved by standard MOSFETS. In addition, the lower on-resistance reduces the amount of power that is lost as heat when switching currents. The array also has an on-resistance temperature coefficient that compensates for the temperature coefficient of the drive circuitry, ensuring that the arrays will remain in a state of thermal equilibrium and reduce any differences in their performance.

The GWM100-01X1-SL is particularly suitable for applications that require high speed and efficiency. This is due to its low gate capacitance, which enables it to switch quickly, and its low output capacitance, which reduces power losses. Moreover, its low internal gate resistance ensures that it can operate at frequencies up to 35 MHz, while ensuring low levels of power consumption. It also has a low power dissipation when switching currents, allowing for efficient operation.

The GWM100-01X1-SL is also well-suited for use in applications that require high-voltage operation. This is because its low on-resistance and its temperature coefficient compensate for gate oxide degradation and gate oxide leakage at high voltages, allowing for efficient power switching in high-voltage circuits. In addition, its low output capacitance reduces power losses in applications that require high-voltage operation.

The GWM100-01X1-SL’s working principle involves three distinct principles: the current flow, the electric field, and the capacitance effect. Current flows through the device’s source and drain terminals, creating an electric field that reduces the device’s on-resistance. The current also creates an electric field between the source and drain terminals, which causes the gate to begin to turn on, reducing the device’s on-resistance. The electrical field also creates a capacitance effect, which further reduces the device’s on-resistance. Finally, the capacitance effect causes a drop in voltage between the source and drain terminals, lowering the device’s on-resistance and allowing current to flow.

The GWM100-01X1-SL is an ideal solution for power switching applications requiring high voltage and high current operations. It is well-suited for DC/DC converters, RF transmitters, and power supplies due to its low on-resistance, fast switching, and low power dissipation characteristics. The device’s low on-resistance, temperature coefficient, and capacitance effects allow for efficient power switching in high-voltage applications, making it an ideal choice for such applications. Additionally, its ability to operate at frequencies up to 35MHz, coupled with its low gate resistance, enables it to provide an efficient and cost-effective solution for applications requiring fast switching and high efficiency.

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