Allicdata Part #: | GWM120-0075P3-SMD-ND |
Manufacturer Part#: |
GWM120-0075P3-SMD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET 6N-CH 75V 118A ISOPLUS |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 75V 118A... |
DataSheet: | GWM120-0075P3-SMD Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 118A |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 17-SMD, Gull Wing |
Supplier Device Package: | ISOPLUS-DIL™ |
Base Part Number: | GWM120 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FETs, otherwise known as Field Effect Transistors, are a type of electronic device used for amplifying, switching, and controlling electronic signals across an electronic circuit. The GWM120-0075P3-SMD is a specific type of FET, which is a two stage, full array (all internal components) FET device. This device can be used in a variety of circuit applications, such as switching and controlling signals. The GWM120-0075P3-SMD also offers excellent linearity and noise performance, as well as low power consumption.
The GWM120-0075P3-SMD is a two-stage device, which means that it has two transistors connected in series. The two transistors are connected together in a controlling and amplifying relationship, so that when one transistor gets turned on, the other one turns off. This kind of array design is often used in a variety of signal-control applications, as it can offer excellent linearity, noise performance, and power consumption. In addition, the GWM120-0075P3-SMD provides a large variety of output stages, allowing for greater customization of signal amplifying and control.
The working principle of the GWM120-0075P3-SMD is a commonly used signal amplification and control method known as \'common gate feedback architecture.\' In this architecture, one of the transistors acts as a gate, while the other serves as an amplifier. The transistor gate is connected to the signal source, while the amplifier outputs the amplified signal. When a signal is presented to the gate, it is directed to the amplifier, which increases the signal strength and directs it back to the gate. This process is repeated, until the signal reaches the desired strength. The advantage of this approach is that it can provide extremely accurate and linear signal amplification, while simultaneously controlling the signals amplifying process.
The GWM120-0075P3-SMD offers a number of advantages, such as its two-stage, full-array design and its common gate feedback architecture. It is well suited for both analog and digital applications, and offers excellent levels of precision, linearity, noise performance, and power consumption. In addition, its wide assortment of output stages makes it suitable for a variety of signal control applications. As such, the GWM120-0075P3-SMD is an ideal choice for a wide range of signal amplifying and control applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GWM120-0075P3 | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 118A ISO... |
GWM160-0055P3 | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 55V 160A ISO... |
GWM100-01X1-SL | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 100V 90A ISO... |
GWM100-01X1-SMD | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 100V 90A ISO... |
GWM120-0075P3-SMD | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 118A ISO... |
GWM120-0075X1-SL | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 110A ISO... |
GWM120-0075X1-SLSAM | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 110A ISO... |
GWM120-0075X1-SMD | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 110A ISO... |
GWM120-0075X1-SMDSAM | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 110A ISO... |
GWM160-0055X1-SL | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 55V 150A ISO... |
GWM160-0055X1-SLSAM | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 55V 150A ISO... |
GWM160-0055X1-SMD | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 55V 150A ISO... |
GWM160-0055X1-SMDSAM | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 55V 150A ISO... |
GWM180-004X2-SL | IXYS | 15.93 $ | 1000 | MOSFET 6N-CH 40V 180A 17-... |
GWM180-004X2-SLSAM | IXYS | 15.93 $ | 1000 | MOSFET 6N-CH 40V 180A 17-... |
GWM180-004X2-SMD | IXYS | 15.93 $ | 1000 | MOSFET 6N-CH 40V 180A 17-... |
GWM180-004X2-SMDSAM | IXYS | 15.93 $ | 1000 | MOSFET 6N-CH 40V 180A 17-... |
GWM100-0085X1-SMD | IXYS | 17.34 $ | 1000 | MOSFET 6N-CH 85V 103A ISO... |
GWM100-01X1-SLSAM | IXYS | 18.28 $ | 1000 | MOSFET 6N-CH 100V 90A ISO... |
GWM100-01X1-SMDSAM | IXYS | 18.28 $ | 1000 | MOSFET 6N-CH 100V 90A ISO... |
GWM120-0075P3-SL | IXYS | 19.32 $ | 1000 | MOSFET 6N-CH 75V 118A ISO... |
GWM100-0085X1-SMD SAM | IXYS | 20.4 $ | 1000 | MOSFET 6N-CH 85V 103A ISO... |
GWM120-0075P3-SMD SAM | IXYS | 22.73 $ | 1000 | MOSFET 6N-CH 75V 118A ISO... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...