GWM120-0075P3

The GWM120-0075P3 is a power MOSFET array in the SOT-223 package. The MOSFET array features two N-channel MOSFETs with two gates. Each channel has two gate connection options, a surface mount and a through hole option. The P3 suffix implied a RDS(on) of 0.75mΩ for one of the MOSFETs in the package. This device may be used in applications with voltages up to 60V and currents up to 6A.

A power MOSFET is a voltage controlled field effect transistor that functions similarly to a standard transistor. It has an insulated gate which consists of a source, a drain, and a gate. When the gate is triggered, current flows from the source to the drain and can control an electrical output. A power MOSFET array consists of multiple MOSFETs in one package, allowing for more complex control of electrical outputs.

The GWM120-0075P3 is used in applications where more complex control of current is needed. The array has two independent N-channel MOSFETs with two gates each. This allows for more precision in controlling the current through the device, as each gate can be triggered independently. The two gate configuration can also be used to increase the off state leakage current and minimize the input capacitance. The array is also capable of handling a wide range of voltages and currents, making it suitable for high power applications.

The GWM120-0075P3 is a versatile power MOSFET array due to its dual gate and wide voltage range. It is mainly used in automotive applications, such as for powering fuel pumps and other engine components, as well as for controlling electrical fans and other cooling systems. It can also be used in industrial, audio and consumer electronics for applications where both high power and precision control are needed.