Allicdata Part #: | GWM120-0075P3-SL-ND |
Manufacturer Part#: |
GWM120-0075P3-SL |
Price: | $ 19.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET 6N-CH 75V 118A ISOPLUS |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 75V 118A... |
DataSheet: | GWM120-0075P3-SL Datasheet/PDF |
Quantity: | 1000 |
36 +: | $ 17.56340 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 118A |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 17-SMD, Flat Leads |
Supplier Device Package: | ISOPLUS-DIL™ |
Base Part Number: | GWM120 |
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GWM120-0075P3-SL is an integrated circuit belonging to the family of transistors known as Field Effect Transistors (FET) and Metal Oxide Semiconductor FETs (MOSFETs). This particular device is designed as a set of three FETs in an array configuration with both N-channel and P-channel types. The FETs in this device are composed of metal oxide layers that are several tens of nanometers thick and are used for controlling the flow of electrons in a circuit. The device serves various applications of controlling electrical signals, such as switching and amplifying signals.
The GWM120-0075P3-SL is mainly used for applications requiring high switching frequency, high-bandwidth operation, as well as high input impedance. The device can be used for various purposes ranging from driving motors, linear voltage regulators, and switching speed controllers to audio frequency amplifiers. It is also useful for logic circuit applications, such as multiplexers, crosspoint switches, and voltage regulators. It is known to have low total gate charge, low on-resistance and high off-state reliability making it suitable for high-speed, high-frequency applications.
The working principle of GWM120-0075P3-SL is based on the principle of transistors, which states that the current flowing between two terminals is controlled by another terminal. In FETs, a voltage is applied to the gate terminal, which creates an electric field across a channel. When a certain voltage level is applied, the electric field penetrates into the channel and results in current flowing from source to drain. The device has been designed to use both N-channel and P-channel transistors in an array, so that two voltages can be applied to the gates of two transistors in the array, resulting in opposite current directions. This makes it suitable for amplifying and switching electrical signals.
In addition, the GWM120-0075P3-SL is highly temperature tolerant and can operate in temperatures ranging from -55 degrees Celsius to +150 degrees Celsius. The device also has an Electrostatic Discharge (ESD) protection rating of 8 kV, which makes it suitable for use in harsh environments. Its enhanced input output functionality and low power consumption make it an ideal choice for various applications, from consumer electronics to industrial applications.
GWM120-0075P3-SL is an attractive device for many applications because of its low power consumption and small size. The device is considered to be reliable and is easy to use. Its low on-resistance, high off-state reliability, and high temperature tolerance make it suitable for high-speed and high-frequency applications. This makes it an ideal choice for applications requiring high switching frequency, high-bandwidth operation, and high input impedance. Therefore, GWM120-0075P3-SL is an ideal device for a wide range of applications ranging from consumer electronics to industrial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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GWM120-0075P3 | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 118A ISO... |
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GWM100-01X1-SMD | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 100V 90A ISO... |
GWM120-0075P3-SMD | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 118A ISO... |
GWM120-0075X1-SL | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 110A ISO... |
GWM120-0075X1-SLSAM | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 110A ISO... |
GWM120-0075X1-SMD | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 110A ISO... |
GWM120-0075X1-SMDSAM | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 75V 110A ISO... |
GWM160-0055X1-SL | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 55V 150A ISO... |
GWM160-0055X1-SLSAM | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 55V 150A ISO... |
GWM160-0055X1-SMD | IXYS | 0.0 $ | 1000 | MOSFET 6N-CH 55V 150A ISO... |
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GWM180-004X2-SMD | IXYS | 15.93 $ | 1000 | MOSFET 6N-CH 40V 180A 17-... |
GWM180-004X2-SMDSAM | IXYS | 15.93 $ | 1000 | MOSFET 6N-CH 40V 180A 17-... |
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GWM100-01X1-SMDSAM | IXYS | 18.28 $ | 1000 | MOSFET 6N-CH 100V 90A ISO... |
GWM120-0075P3-SL | IXYS | 19.32 $ | 1000 | MOSFET 6N-CH 75V 118A ISO... |
GWM100-0085X1-SMD SAM | IXYS | 20.4 $ | 1000 | MOSFET 6N-CH 85V 103A ISO... |
GWM120-0075P3-SMD SAM | IXYS | 22.73 $ | 1000 | MOSFET 6N-CH 75V 118A ISO... |
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