Allicdata Part #: | GWM120-0075X1-SL-ND |
Manufacturer Part#: |
GWM120-0075X1-SL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET 6N-CH 75V 110A ISOPLUS |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 75V 110A... |
DataSheet: | GWM120-0075X1-SL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 110A |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 17-SMD, Flat Leads |
Supplier Device Package: | ISOPLUS-DIL™ |
Base Part Number: | GWM120 |
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The GWM120-0075X1-SL is a gallium nitride power transistor that can be classified as a transistor array. This device is designed and produced to meet the requirements in nanotechnologies and power fields. It offers voltage, current and power capabilities beyond what is generally achievable with other technologies and materials. It provides a wide range of features that can help reduce costs and improve performance.
The GWM120-0075X1-SL offers a wide range of applications in both high and low voltage environments. Its superior voltage holding capabilities make it an ideal choice for use in applications such as motor control, power conversion, LED lighting, display and backlighting, medical, automotive and industrial applications. The device is also suitable for use in microwave applications, allowing it to be used in RF and wireless devices.
The GWM120-0075X1-SL has a simple, yet efficient working principle. It utilizes a multi-channel, free-floating construction in order to achieve its superior performance. The multi-channel design consists of N-type and P-type channels joined together by a gallium nitride gate structure. An electric current passes through the channels, creating an electric field between them. This electric field is the basis of the transistor\'s operation, as the gate is what controls the flow of electrons in and out.
In order to increase its efficiency, the GWM120-0075X1-SL utilizes a chip-scale package. This package is designed to reduce size and increase performance by integrating a majority of the components onto a single chip. By reducing the size, the transistor is able to operate at a lower voltage and lower power levels than traditional power transistors.
The GWM120-0075X1-SL features a wide range of performance capabilities including low on-resistance, low gate voltage and low gate current. These features make it suitable for low-power applications and enable high switching frequencies with minimal power losses. Additionally, its free-floating design eliminates the need for additional gate capacitance, allowing for an optimal voltage/current ratio.
The Gwm120-0075X1-SL is a reliable and versatile device that provides a wide range of features and capabilities. It has demonstrated excellent performance and reliability in various applications, making it well suited for use in many different industries. Its inexpensive price and simple working principle make it an excellent choice for power applications where cost and performance are of paramount importance.
The specific data is subject to PDF, and the above content is for reference
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