GWM160-0055X1-SMD Allicdata Electronics
Allicdata Part #:

GWM160-0055X1-SMD-ND

Manufacturer Part#:

GWM160-0055X1-SMD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET 6N-CH 55V 150A ISOPLUS
More Detail: Mosfet Array 6 N-Channel (3-Phase Bridge) 55V 150A...
DataSheet: GWM160-0055X1-SMD datasheetGWM160-0055X1-SMD Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Part Status: Obsolete
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL™
Base Part Number: GWM160
Series: --
Packaging: Tube 
Description

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FETs (Field Effect Transistors) are transistors that are used to regulate the flow of electrical current in different types of devices. GWM160-0055X1-SMD is a type of FET array, which is a combination of FET chips that are connected together on one board. In this article, we will discuss the application field and working principle of GWM160-0055X1-SMD.

Applications of GWM160-0055X1-SMD

The GWM160-0055X1-SMD is mainly used for audio power amplifier applications. It is designed to provide high current, low noise performance and high PSRR (power supply rejection ratio), making it ideal for use in consumer audio equipment. The FET array can also be used in other applications, such as automotive electronic systems, power supplies and lighting control.

Working Principle of GWM160-0055X1-SMD

The GWM160-0055X1-SMD consists of four FETs (Field Effect Transistors) connected in parallel. These FETs are arranged in the form of a cross-coupled circuit, with one FET controlling the current of the other three. This allows the FET array to act as a voltage-controlled amplifier. This means that the FET array is capable of amplifying signals with an input voltage as low as 0.3V and an output voltage of up to 300V.

In addition to its amplifying capabilities, the GWM160-0055X1-SMD offers some additional features that make it a very attractive option for audio power amplifier applications. These features include a wide bandwidth, low distortion, low driver power consumption and low output noise. This makes the FET array ideal for high-quality sound systems.

The FET array also has a very low power consumption, with an operating current of only 7.5mA and a total power dissipation of only 6W. This makes it a very efficient choice for powering audio systems.

Conclusion

The GWM160-0055X1-SMD is an excellent choice for audio power amplifier applications. Its cross-coupled circuit, low power consumption, wide bandwidth and low distortion make it an ideal choice for powering high-quality sound systems. In addition, its low driver power consumption and low output noise make it an excellent choice for automotive and lighting control applications.

The specific data is subject to PDF, and the above content is for reference

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