Allicdata Part #: | GWM180-004X2-SL-ND |
Manufacturer Part#: |
GWM180-004X2-SL |
Price: | $ 15.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET 6N-CH 40V 180A 17-SMD |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 40V 180A... |
DataSheet: | GWM180-004X2-SL Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 14.47740 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 180A |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 17-SMD, Flat Leads |
Supplier Device Package: | ISOPLUS-DIL™ |
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GWM180-004X2-SL is a type of transistor array from Maxim Integrated Products, the leader in analog and mixed-signal semiconductor technology. The device is specifically designed to provide a comprehensive solution for multi-channel power management applications. This type of transistor array is often referred to as a power array, featuring a wide array of power management functions, including switched-mode power converters, voltage regulators, and power-line conditioning.
The GWM180-004X2-SL consists of two transistors with a common drain. Each transistor has its own gate, source, and drain terminal. The device is built on a silicon-germanium-carbon substrate, providing an ideal platform for the high speed, low power, and low noise operation of power arrays. These components involve the application of field-effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs).
In terms of application field, the GWM180-004X2-SL is intended for use in high-voltage, high-current, high-power, and high-frequency environments. These environments can be found in power supplies, motor control systems, medical devices, military communications systems, robotics, and aircraft and automotive systems. The device works best in situations where there is a need to precisely regulate and control voltage, current, and power.
In terms of working principle, the GWM180-004X2-SL utilizes field effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). These components are essential in controlling, managing, and regulating power. The device works by utilizing two transistors with a common drain. Each transistor has its own gate, source, and drain terminals. The device draws power from the gate terminal, which is also called the gate drive, to the source terminal. From there, the power is switched on and off depending on the output signal from the gate. This in turn controls the flow of current which travels from the source to the drain.
The GWM180-004X2-SL from Maxim Integrated Products is designed to meet the demands of the most demanding power management applications. It offers a comprehensive solution for controlling, managing, and regulating power in a wide variety of environments. Featuring the latest field-effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) technology, this product is ideal for ensuring precise power regulation, as well as high speed, low noise, and low power operation.
The specific data is subject to PDF, and the above content is for reference
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