IRF6802SDTRPBF Allicdata Electronics
Allicdata Part #:

IRF6802SDTRPBF-ND

Manufacturer Part#:

IRF6802SDTRPBF

Price: $ 0.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 25V 16A SA
More Detail: Mosfet Array 2 N-Channel (Dual) 25V 16A 1.7W Surfa...
DataSheet: IRF6802SDTRPBF datasheetIRF6802SDTRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.62000
10 +: $ 0.60140
100 +: $ 0.58900
1000 +: $ 0.57660
10000 +: $ 0.55800
Stock 1000Can Ship Immediately
$ 0.62
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V
Power - Max: 1.7W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SA
Supplier Device Package: DIRECTFET™ SA
Description

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IRF6802SDTRPBF is a special type of transistor used in DataTron array applications. It is a duplex FET (Field Effect Transistor) array with a high breakdown voltage and a low on-resistance. It is capable of switching up to 20 kHz in an enclosed area. This type of transistor is ideal for applications that require low off-state currents and a high input impedance.

The generic form of the IRF6802SDTRPBF is N-channel MOSFET Array. It is designed with two transistors, with each transistor having two source and drain pins. This type of MOSFET array is specifically designed for low power devices. It features a drain-to-source voltage of up to 400 V and a rated continuous drain current of up to 900 mA.

The basic operation of an IRF6802SDTRPBF array is as follows. When the gate voltage of the transistor is at 0 Volts, it is in its off-state and does not conduct current. When the gate voltage increases to 5 V or more, it is in its on-state and conducts current from the drain to the source. The output voltage across the drain and source terminals is typically in the range of 0.6 V to 0.7 V with a low latency.

The IRF6802SDTRPBF array has a variety of applications in the industrial, consumer and automotive fields. The most common application is as an address decoder in data processing and storage. This type of transistor array can be used in a variety of applications, including memory and logic circuits, as well as in automotive components. They are also commonly used in television sets as drivers for the display modules. Additionally, they are often used in the control of discrete loads where high switching speed and accuracy are required.

The working principle of the IRF6802SDTRPBF array is based on the physics of the MOSFET. This type of transistor is made up of a source and drain region. The source is the area where current flows from, and the drain is the area where current flows to. The gate of the MOSFET is responsible for controlling the current flow from the source to the drain. When a voltage is applied to the gate, it generates a field that allows current to flow from the source to the drain. This field is referred to as the drain current and is the force that drives the transistor.

The IRF6802SDTRPBF array is a preferred choice by electronics engineers in many industries due to its high switching speed and low power consumption. The array provides flexibility and reliability when used in various applications, such as memory and logic circuits or as drivers for display modules. This type of MOSFET is available in surface mount and through-hole package options, making it easier to install and customize for different applications.

The specific data is subject to PDF, and the above content is for reference

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