IRF6724MTR1PBF

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IRF6724MTR1PBF is a Power MOSFET produced by International Rectifier, which is often used in high-performance power-switching applications. It is Volt-Ohm-Milliohm Test System (VOMT) compliant and has a Robust Gate Oxide Technology which keeps its low on-state resistance and ensures higher efficiency, lower switching losses and low gate charge. It is specially designed to have excellent thermal stability and low gate charge and is suitable for high voltage applications.

IRF6724MTR1PBF belongs to the group of field effect transistors and more specifically, to the group of MOSFET (Metal Oxide Semiconductor Field Effect Transistors). MOSFETs are transistors which use the gate voltage to control their conduction, represents the most important type of transistors and are the main component of most electronic circuits. They have an excellent control characteristic due to the high input impedance and they do not draw appreciable current, so they dissipate low power. The MOSFETs are divided in two groups: enhancement type transistors and depletion type transistors. IRF6724MTR1PBF belongs to the enhancement type.

The working principle of a MOSFET is based on the voltage control over the resistance between the drain and the source. The MOSFET’s gate forms a capacitor -separated- between the source and the drain and acts as a variable resistor between them. Consequently, there is an inversion layer formed between the source and the drain and it is this layer which allows for the drain current to be controlled with the gate voltage. This allows for the control of the current through the MOSFET with a voltage level, which makes them especially suitable for switching applications.

The IRF6724MTR1PBF an N-Channel Enhancement type MOSFET and is often used in high-performance power-switching applications such as AC/DC converters, power inverters, Ultra-DC voltage converters and DC-DC conversion. Its features include a current drain-source on-state resistance of 0.09 ohm, a voltage drain-source breakdown of 70V, a current gate-source threshold voltage of 11V and a voltage gate-source of Gate Threshold Voltage of 4V. It can operate at high frequencies, up to 100KHz, and can be used in any environment due to its - 55°C to 150°C operating temperature range.

In conclusion, the IRF6724MTR1PBF is an ideal power MOSFET for switching applications due to its low on-state resistance and general performance. Its design and features make it suitable for high voltage and high frequency applications, so it is often used in high-performance gate drives, such as converters and inverters. It is robust, has a high-performance gate oxide technology, and its operation temperature range is wide. All these features make the IRF6724MTR1PBF a great choice for any power-switching application.

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