
Allicdata Part #: | IRF6216TRPBFTR-ND |
Manufacturer Part#: |
IRF6216TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 150V 2.2A 8-SOIC |
More Detail: | P-Channel 150V 2.2A (Ta) 2.5W (Ta) Surface Mount 8... |
DataSheet: | ![]() |
Quantity: | 12000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1280pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 1.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF620TRPBF, produced by Infineon Technologies, is a high-voltage MOSFET with a maximum operating voltage of 100V. The single N-channel device has a maximum drain-source breakdown voltage of 100V and an on-resistance of 4.7mΩ. This makes it suitable for a wide range of applications, such as motor control, DC/DC converters, high current switches, and lighting applications.
The MOSFET uses a standard MOSFET structure, composed of a source terminal, a drain terminal, a gate terminal, and a body terminal. The source and drain terminals are connected to the N-channel, while the body and gate terminals are connected to the P-channel. The depletion region is created by the P-channel, and the depletion region forms the N-channel.
The working principle of the IRF6216TRPBF is simple. When a voltage is applied to the gate terminal, it creates an electric field which attracts electrons from the source terminal to the drain terminal. This electric field is also known as the "depletion region". Because of this depletion region, a closed channel is formed between the source and drain. This closed channel allows current to flow between the source and drain.
The IRF6216TRPBF has a very low gate-source capacitance, meaning that it can handle high frequency switching. It also has a very low gate-drain capacitance. This makes it ideal for applications that require high efficiency, such as motor control, DC/DC converters, and high current switches.
The IRF6216TRPBF has a very fast turn-on and turn-off time, meaning that it is suitable for high frequency switching applications. This makes it suitable for pulsed DC and AC applications. It is also very efficient in power management, meaning that it can be used to optimize the power consumption of a device. Finally, it is able to operate at high ambient temperatures, making it suitable for industrial and automotive applications.
The IRF6216TRPBF is a very versatile and reliable device. It is suitable for a wide range of applications, including motor control, DC/DC converters, high current switches, and lighting applications. It has a low gate-source and gate-drain capacitance, meaning that it can handle high frequency switching. Additionally, it has a fast turn-on and turn-off time, and is able to operate at high ambient temperatures. The IRF6216TRPBF is an invaluable device for many applications.
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