IRF6216TRPBF Allicdata Electronics
Allicdata Part #:

IRF6216TRPBFTR-ND

Manufacturer Part#:

IRF6216TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 150V 2.2A 8-SOIC
More Detail: P-Channel 150V 2.2A (Ta) 2.5W (Ta) Surface Mount 8...
DataSheet: IRF6216TRPBF datasheetIRF6216TRPBF Datasheet/PDF
Quantity: 12000
Stock 12000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF620TRPBF, produced by Infineon Technologies, is a high-voltage MOSFET with a maximum operating voltage of 100V. The single N-channel device has a maximum drain-source breakdown voltage of 100V and an on-resistance of 4.7mΩ. This makes it suitable for a wide range of applications, such as motor control, DC/DC converters, high current switches, and lighting applications.

The MOSFET uses a standard MOSFET structure, composed of a source terminal, a drain terminal, a gate terminal, and a body terminal. The source and drain terminals are connected to the N-channel, while the body and gate terminals are connected to the P-channel. The depletion region is created by the P-channel, and the depletion region forms the N-channel.

The working principle of the IRF6216TRPBF is simple. When a voltage is applied to the gate terminal, it creates an electric field which attracts electrons from the source terminal to the drain terminal. This electric field is also known as the "depletion region". Because of this depletion region, a closed channel is formed between the source and drain. This closed channel allows current to flow between the source and drain.

The IRF6216TRPBF has a very low gate-source capacitance, meaning that it can handle high frequency switching. It also has a very low gate-drain capacitance. This makes it ideal for applications that require high efficiency, such as motor control, DC/DC converters, and high current switches.

The IRF6216TRPBF has a very fast turn-on and turn-off time, meaning that it is suitable for high frequency switching applications. This makes it suitable for pulsed DC and AC applications. It is also very efficient in power management, meaning that it can be used to optimize the power consumption of a device. Finally, it is able to operate at high ambient temperatures, making it suitable for industrial and automotive applications.

The IRF6216TRPBF is a very versatile and reliable device. It is suitable for a wide range of applications, including motor control, DC/DC converters, high current switches, and lighting applications. It has a low gate-source and gate-drain capacitance, meaning that it can handle high frequency switching. Additionally, it has a fast turn-on and turn-off time, and is able to operate at high ambient temperatures. The IRF6216TRPBF is an invaluable device for many applications.

The specific data is subject to PDF, and the above content is for reference

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