| Allicdata Part #: | IRF634SPBF-ND |
| Manufacturer Part#: |
IRF634SPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 250V 8.1A D2PAK |
| More Detail: | N-Channel 250V 8.1A (Tc) 3.1W (Ta), 74W (Tc) Surfa... |
| DataSheet: | IRF634SPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 74W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 450 mOhm @ 5.1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.1A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF634SPBF is a voltage operated transistor that is typically used in applications that require high power dissipation or high-speed switching. It is a N-channel MOSFET, with a maximum drain-source voltage of 175V, a maximum drain current of 125A, and a maximum power dissipation of 150W. This voltage operated transistor is commonly found in power electronic applications and automotive circuits.
IRF634SPBF is a voltage operated transistor and the working principle of this MOSFET is that when the source is connected to the gate and a positive voltage is applied, the reverse breakdown voltage of the junction inside the MOSFET is exceeded and a current flows through the channel of the transistor between the source and drain terminals. This voltage voltage then causes the channel to become increasingly conductive and, as a result, drain current also increases.
In order to understand the behavior of the IRF634SPBF, it is important to consider various operating parameters such as gate threshold voltage, gate-source capacitance, safe operating area, power dissipation, and input capacitance. The gate threshold voltage (VGS) is the voltage that must be applied to the gate in order for the channel to conduct current. The lower the VGS, the lower the drain current.
The gate-source capacitance (CGS) is the parasitic capacitance between the gate and source terminals of the transistor. As the gate voltage increases, the gate-source capacitance increases, resulting in a reduction of drain current. The gate capacitance acts as an open switch, so it is important to consider the gate capacitance when choosing a MOSFET for a particular application.
The safe operating area (SOA) describes the maximum range of drain current and drain voltage that can be safely applied to the device. This range can depend on various factors such as temperature, gate voltage, and source-drain voltage. Operating outside of this range could result in damage to the device.
Power dissipation is the amount of energy dissipated by a device as it is operating. The maximum power dissipation of the IRF634SPBF is 150W, so it is important to ensure that the power dissipated is within this range. Power dissipation is also affected by factors such as the ambient temperature and heatsink size.
Finally, the input capacitance (Ciss) is the capacitance between the drain and source terminals of the device. The Ciss of the MOSFET is determined by the size of the channel; a smaller channel results in a lower Ciss and larger channel results in a higher Ciss. Knowing the Ciss of a device is important for determining the characteristics of DC and AC signals that the device can handle.
The IRF634SPBF is a voltage operated MOSFET transistor with many useful applications. Its high power dissipation capacity makes it ideal for switching applications and its ability to handle high voltage and current makes it suitable for power electronic applications. Additionally, its various parameters such as gate threshold voltage, gate-source capacitance, safe operating area, power dissipation, and input capacitance are important1 to consider when selecting the transistor for a particular application.
The specific data is subject to PDF, and the above content is for reference
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IRF634SPBF Datasheet/PDF