
Allicdata Part #: | IRF6644TR1-ND |
Manufacturer Part#: |
IRF6644TR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V DIRECTFET-MN |
More Detail: | N-Channel 100V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.8V @ 150µA |
Package / Case: | DirectFET™ Isometric MN |
Supplier Device Package: | DIRECTFET™ MN |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2210pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 10.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.3A (Ta), 60A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF6644TR1 is a P-Channel power MOSFET (Metal oxide semiconductor field effect transistor). This specific type of device is designed for applications which require higher currents and voltages than normal P-Channel MOSFETs. This MOSFET is a single-channel, high-voltage and high-current component, and it is primarily used in very small and low-power applications such as mobile phones and other electronic devices.
The IRF6644TR1 has a drain-source voltage of +55 volts and is capable of handling 75 amperes of continuous drain current. It also has a high frequency switching capability with a maximum continuous drain current of 150 amperes and a maximum operating frequency range of up to 1.2 MHz. With the addition of an external resistor, the maximum operating frequency range can be extended up to 1.7 MHz. Additionally, the MOSFET features a very low input capacitance, which provides a better frequency response and reduced switching times.
The most notable application for the IRF6644TR1 is in power switching circuits. It is typically used as a switch in circuits that require higher current and voltage applications, such as in high wattage LED driver circuits. Additionally, this particular MOSFET can be used in various high-power step-down voltage converters, for industrial and automotive applications. The switch can also be used in power management systems as a low-On resistance switch, to increase the efficiency of the system. In some cases, the IRF6644TR1 can also be used as a DC-DC converter, featuring low input and output voltages.
The working principle behind the IRF6644TR1 is based on the fact that when the gate voltage of the device is applied, the drain-source current will start flowing. The higher the gate voltage, the higher the channel resistance, which controls the current to the drain, and this in turn affects the drain-source voltage. The device has been specifically designed to operate over a wide gate voltage range and can withstand up to a total of +60 volts.
The IRF6644TR1 is a highly efficient and reliable MOSFET, designed for high currents, high voltages and high frequencies. It is ideal for power management, LED driver circuits, DC-DC converters and other high-power applications. While some external components and a gate voltage control circuit may be needed in certain applications, the IRF6644TR1 is overall a great choice for any applications which require high power switching and protection.
The specific data is subject to PDF, and the above content is for reference
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