
Allicdata Part #: | IRF6717MTR1PBFTR-ND |
Manufacturer Part#: |
IRF6717MTR1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 38A DIRECTFET |
More Detail: | N-Channel 25V 38A (Ta), 200A (Tc) 2.8W (Ta), 96W (... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.35V @ 150µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6750pF @ 13V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 1.25 mOhm @ 38A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Ta), 200A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF6717MTR1PBF is a type of Field Effect Transistor (FET), more specifically, a Single P Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). The IRF6717MTR1PBF can be used in combination with a variety of microcontrollers and application areas and is suitable for high frequency applications, specifically low-side switching. In combination with other components, the IRF6717MTR1PBF can be used to build switches, amplifiers, and other robust structures.
The working principle of the IRF6717MTR1PBF is based on the electrostatic field generated by applying a Voltage between the terminals of the source/drain (gate and drain). When this gate voltage is increased, the resulting field increases and a conducting channel is established between the source and drain. This conducting channel is used to either amplify the signal or switch it off.
The IRF6717MTR1PBF is mostly used as a low-side switch due to its lower On-resistance. Usually, it is used to switch a load of between 1A and 5A depending on the types of FET and their configuration, however, higher currents (up to 10A) can be achieved with the correct design.
The IRF6717MTR1PBF is used in application areas such as robotics, robotics motors, automotive power steering, automotive power steering and OBD systems, industrial power management, etc. It can also be used for audio/video switching, brightness control, power conversion, pulsewidth modulation (PWM) for motor control and speed/torque control. The wide range of application fields and contributions to the advancements of embedded design make the IRF6717MTR1PBF a versatile and highly sought-after component.
The IRF6717MTR1PBF finds use in many applications where an efficient and reliable low-side switch is required. The component is relatively easy to use and is also cost effective. The component is also very strong and is capable of withstanding high transient currents as well as high temperatures. This makes it suitable for use in high frequency applications such as low-side switching.
The IRF6717MTR1PBF is one of the most popular and sought after components due to its wide variety of applications and its efficient working principles. The component is easy to use and is also cost effective, making it a popular choice for many applications. It can be used for a wide range of applications, from automotive power steering to robotics. With its high on/off resistance and its excellent high temperature characteristics, the IRF6717MTR1PBF is a robust and reliable component for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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