| Allicdata Part #: | IRF640SPBF-ND |
| Manufacturer Part#: |
IRF640SPBF |
| Price: | $ 1.45 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 18A D2PAK |
| More Detail: | N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surfa... |
| DataSheet: | IRF640SPBF Datasheet/PDF |
| Quantity: | 1374 |
| 1 +: | $ 1.45000 |
| 10 +: | $ 1.40650 |
| 100 +: | $ 1.37750 |
| 1000 +: | $ 1.34850 |
| 10000 +: | $ 1.30500 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 130W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRF640SPBF is a N-Channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor). It is usually used in areas such as consumer and industrial electronics, automotive industry, portable electronics, telecommunications and other areas. This transistor is also popularly used as a DC motor speed control. By controlling the gate and drain, the electrical current can be modulated.
The IRF640SPBF MOSFET can function as a switch when driving a load. It is a three-terminal device and the source, gate and drain are used to control the current flow. The drain is connected to the positive supply, while the source is connected to the negative supply. The gate is connected to the signal from the controller to control the current flowing from the drain to the source.
In this circuit, the signal to the gate can be inverted, which means that when the switch is opened, it will be connected to the positive supply. When the switch is closed, the signal to the gate will be the same as the signal to the source. This way, the current flow can be switched from source to drain.
The IRF640SPBF MOSFET works in the enhancement mode. This means that the voltage needed to control the gate is less than the voltage that needs to be applied to turn off the device. In this mode, the device will turn on when a controlled voltage is applied to the gate. As the voltage applied to the gate is increased, the conduction between the drain and the source increases.
When the gate is grounded, no current flows. Therefore, the IRF640SPBF MOSFET can be used to regulate the output current in a circuit. This is useful in controlling the speed of motors, controlling the brightness of lamps, and other applications.
The IRF640SPBF also works in the current source mode. In this mode, the drain is in the higher voltage and the source is in the lower voltage. When controlled voltage is applied to the gate, current will flow from the drain to the source.
In conclusion, the IRF640SPBF is a versatile MOSFET with a wide range of applications. It can be used in various consumer, industrial, and automobile applications. It can also be used in current source mode to feature adjustable current control. Overall, this device is a powerful, reliable, and cost effective solution.
The specific data is subject to PDF, and the above content is for reference
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IRF640SPBF Datasheet/PDF