IRF6635TR1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF6635TR1 is a low voltage, low gate charge, Fast Intrinsic Rectifier (Fast IR®) HexFET® power MOSFET. It has been designed to improve efficiency in a wide range of Applications. This MOSFET is the most suitable for High-Current applications. It is an N-Channel Enhancement Mode Silicon MOSFET. The device utilizes state-of-the-art proprietary technology to achieve extremely low on-resistance and fast switching. The device also has an excellent thermal impedance and ESD performance.

Application

IRF6635TR1 MOSFET can be used in a wide range of applications including power supply circuits, DC/DC converters, motor controllers, and pulse power switching. It is ideal for switching applications such as DC-DC converters, telecom and audio/video equipment, AC-DC power supplies, lighting ballasts, and LCD displays. It also has a wide variety of applications in the motor control area such as automotive applications, motor control with phase shifting, and electric shaft control. It can also be used in interface circuits, analog sensor applications, and low power, high speed switching.

Working Principle

IRF6635TR1 MOSFET is comprised of a gate, source, and drain. The gate is the control input of the device that is connected to a voltage source to turn the device on or off. The source is connected to ground and the drain is connected to the load. When a positive voltage is applied to the gate, it produces an electric field between the source and the drain, which in turn generates current flow between the three terminals.

The device works on a tri-state principle, meaning that it can be used to turn the device off, on and strong on. The strong-on state occurs when the gate voltage is greater than the source voltage. When the device is “on”, current flows from the source to the drain. The amount of current flow is determined by the voltage difference between the gate and the source. The device turns off when the gate-to-source voltage is reduced to zero, stopping any current flow.

In terms of performance, the device offers a low on-resistance and low gate charge, making it suitable for switch mode applications. This is important as it reduces switching loss and increases efficiency. Moreover, the device also has an excellent thermal impedance and ESD performance, thus reducing the risk of damage from over-current and ESD.

Summary

In summary, IRF6635TR1 MOSFET is a low voltage, low gate charge, Fast Intrinsic Rectifier (Fast IR®) HexFET® power MOSFET that is suitable for a wide range of applications. It works on a tri-state principle and offers a low on-resistance and low gate charge, making it ideal for switch mode applications. Additionally, the device also has an excellent thermal impedance and ESD performance. This makes it suitable for a variety of applications, such as power supply circuits, DC/DC converters, motor controllers, and pulse power switching, among many other things.

The specific data is subject to PDF, and the above content is for reference