| Allicdata Part #: | IRF6620TR1-ND |
| Manufacturer Part#: |
IRF6620TR1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 27A DIRECTFET |
| More Detail: | N-Channel 20V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (... |
| DataSheet: |  IRF6620TR1 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
| Package / Case: | DirectFET™ Isometric MX |
| Supplier Device Package: | DIRECTFET™ MX |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4130pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 27A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 150A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF6620TR1 is a silicon power MOSFET with a very high current and low on-resistance. It is a single-gate N-channel enhancement mode MOSFET and has outstanding high-speed switching capabilities. It is widely used in switching applications that require high current and low on-resistance. Its applications include power converters, power supplies, motor drives, and high-power switching applications.
The IRF6620TR1 is made using the latest MOSFET technology and has a high power density with low on-resistance. It is also ESD protection level 2 compliant so it can perform in a wide range of applications. The device also has a high maximum voltage rating of 650V, which is significantly higher than other devices in its class.
The IRF6620TR1 is rated for continuous drain current of 120A and a maximum drain current of 400A, depending on the specific application conditions. The device also has an easy to use turn-on and turn-off circuit which allows for rapid switching of high current load. The fast response time and high current capability make it ideal for applications with high power requirements.
The working principle of the IRF6620TR1 is the same as any other MOSFET. When a voltage is applied to the gate of the device, it will create an electric field in the substrate of the MOSFET. This electric field causes an increase in the number of electrons in the source/drain region of the MOSFET. The result is an increase in the flow of electrons and an increase in the current that flows through the device. When the voltage is removed, the electric field dissipates and the electrons are no longer able to flow, thereby ceasing the current flow.
The IRF6620TR1 is an ideal power device for a wide range of applications. Its high current and low on-resistance makes it ideal for applications that require rapid switching of high power loads. It is widely used in power supplies, motor drives, and switching applications.
The specific data is subject to PDF, and the above content is for reference
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