IRF6215STRR Allicdata Electronics
Allicdata Part #:

IRF6215STRR-ND

Manufacturer Part#:

IRF6215STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 150V 13A D2PAK
More Detail: P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surfa...
DataSheet: IRF6215STRR datasheetIRF6215STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF6215STRR is a single N-channel MOSFET developed by International Rectifier (IR) and is typical of many types of commercial transistors in the industry. It is a discrete power field-effect transistor in the low side driver configuration. IRF6215STRR is widely used in various industrial applications, such as motor and solenoid control systems, medical grade sensors and other similar environment applications. Its features include a maximum drain-source resistance of 0.014 ohms at 25°C, a maximum drain current of 20 amperes and a maximum gate threshold voltage of 1.3 volts. It also features an ultra-low gate charge of 9 nC (typical) for a total gate charge of 18 nC. It has an operating temperature range of -55°C to +125°C. Other key features of the IRF6215STRR include a maximum drain-source voltage of 40 volts (Vds) and a maximum drain- source on-state resistance of 0.04 ohms (Rds(on)).

IRF6215STRR works on a simple principle. When a voltage is applied to the gate, the core of the MOSFET is affected, creating a conducting channel between source and drain. This creates a low resistance or near-zero resistance between source and drain, facilitating current to flow through the MOSFET. The amount of voltage and therefore current that can pass through the MOSFET is determined by the gate voltage. Higher gate voltage, higher switching speed and lower gate charge are all benefits of the IRF6215STRR. This makes it ideal for applications that need high current, low power consumption and a consistent switching speed.

The IRF6215STRR is well-suited for applications such as power supplies, heating and cooling controllers, power transistor switches, battery management systems and DC-DC converters. Its low on-state resistance and low gate charge makes it an ideal choice for these applications while its ultra-low gate charge allows it to be used in high-temperature environments without suffering excessive losses and heat. The IRF6215STRR is also extremely energy-efficient, making it a great choice for energy-sensitive applications, such as in portable electronics.

The IRF6215STRR is also increasingly being used in automotive applications, such as in lighting and power control systems. For example, it can be used as reverse current limiters and as overvoltage protection devices in battery management systems. The IRF6215STRR can also be used in automotive body control modules, such as lighting control, door locking and window control. The IRF6215STRR is also suitable for use in ac motor control and home appliance applications.

In conclusion, the IRF6215STRR is an ideal power MOSFET for a range of applications that need high current, low power consumption and a consistent switching speed. Its ultra-low gate charge, low on-state resistance and wide temperature range make it a great choice for automotive, medical and industrial applications. Its features also make it an excellent choice for applications that need energy efficiency and robust switching performance.

The specific data is subject to PDF, and the above content is for reference

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