IRF644NSTRLPBF Allicdata Electronics
Allicdata Part #:

IRF644NSTRLPBF-ND

Manufacturer Part#:

IRF644NSTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 14A D2PAK
More Detail: N-Channel 250V 14A (Tc) 150W (Tc) Surface Mount D2...
DataSheet: IRF644NSTRLPBF datasheetIRF644NSTRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF644NSTRLPBF Application Field and Working Principle

The IRF644NSTRLPBF, also known as the Advanced Power MOSFET, is an N-channel, majority carrier, field effect transistor (FET). It is used as an inverted power switch in applications such as switching power supplies, DC to DC converters, phase controllers, lighting dimmers, motor speed controllers, and signal processing circuits. In this article, we will explore the application field and working principle behind the IRF644NSTRLPBF.

The IRF644NSTRLPBF is made up of a specialized semiconductor material that features a wide reaction range and higher tolerance to extreme temperatures. It has a low gate-to-source voltage (Vgs) and high gate-to-drain voltage (Vds) to maintain fast switching operations in low-power applications. Its high junction temperature rating (Tj) also contributes to durability. In addition, the IRF644NSTRLPBF has superior thermal performance, making it ideal for applications that need to handle a wide range of temperature variations.

In terms of its application field, the IRF644NSTRLPBF is used in applications where low on-resistances, fast switching speeds, and low power dissipation are important. In addition, in order to reduce the cost associated with the purchase of electrical components and to increase the capability of the system, the IRF644NSTRLPBF is designed for high voltage operation and can support up to 65V drain-source breakdown.

The IRF644NSTRLPBF has a three-terminal structure and operates in a switching mode. It features a drain, source and gate terminal, where the “body” forms the source and the “gate” forms the drain. When a voltage is applied to the gate, a current is created which flows from the source to the gate. This produces a field in which electrons are attracted, resulting in a current flow between the source and the drain. The source and the gate are kept in a “neutral” state by the depletion layer.

The IRF644NSTRLPBF is designed for digital control and thus to prevent Gate-Source voltage from exceeding the maximum Vgs rating. The Gate voltage is usually limited to less than Vgs(max), usually from 4.5 to 7.0V. The Vgs contributes to the speed at which the switch is activated, as a higher voltage will enable a faster switching process.

The IRF644NSTRLPBF is designed for high level power switching applications and has a maximum “on” current rating of 15A and a maximum “off” voltage of 65V. The operating temperature range is wide, from -40 to +125 degrees Celsius, and the on-resistance is typically low, between approx. 0.18 – 0.21 ohms.

In conclusion, the IRF644NSTRLPBF is a three-terminal N-type, majority carrier, field effect transistor used in switching power supplies, DC to DC converters, phase controllers, lighting dimmers, and motor speed controllers. It offers superior reliability and can support high temperatures and is rated up to 15A with an operating temperature range of -40 to +125 degrees Celsius.

The specific data is subject to PDF, and the above content is for reference

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