IRF9358PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRF9358PBF is a field effect transistor array, which integrates two independent complementary N and P channel enhancement mode MOSFETs. It is designed as a solution to reduce the amount of space taken up on a printed circuit board, while offering high-speed switching and improved power dissipation for power management applications. The devices offer exceptional on-state resistance, low gate-source thresholds, and superior temperature stability.

Applications of the IRF9358PBF can be found in a wide range applications which require high-speed switching. This includes motor controls, lighting control, battery management systems, and power amplifiers. The devices are also compatible with a wide range of logic families and can be used in low noise applications such as automotive infotainment systems.

The device is capable of operating up to 100V and has a continuous drain current of up to 10A. The drain-to-source on-state resistance is between 0.002Ω and 0.004Ω, while the gate-source threshold voltage is 21V. The device can withstand a peak body diode voltage of up to 150V and has a maximum power dissipation of 350mW.

The working principle of the device is the same as that of any MOSFET. A small voltage is applied to the gate voltage, which creates a vertical electric field between the source and the drain. This field spreads towards the source, reducing the resistance between the source and the drain. This allows current to flow from the drain to the source, and the voltage across the source and the drain to drop. The current flowing between the source and the drain depends on the amount of voltage applied to the gate voltage.

The IRF9358PBF is a powerful device which offers a range of features and can be used for a variety of power management applications. It offers exceptional on-state resistance, low gate-source thresholds, superior temperature stability, and a maximum power dissipation of 350mW. This makes it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference