IRF9Z10PBF

IRF 9Z10PBF Applications and Working Principles

IRF 9Z10PBF is a silicon-synthesized power metal oxide semiconductor field-effect transistor (MOSFET) device manufactured by International Rectifier Corporation. This device is a logic level power MOSFET that is designed to provide the highest performance and reliability in switch-mode applications including DC-to-DC converters, motor and solenoid controls, AND power management.

Overview

The IRF 9Z10PBF is a single-gate, n-channel MOSFET designed with a high-current capacity and low on-resistance. It is available in both a TO-220AB package and an exposed pad TO-236AB package.

The IRF 9Z10PBF is designed for logic-level gate drive applications. This device is capable of operating in low-voltage (3.3V) and medium-voltage (5V) operating systems, with a guaranteed breakdown voltage of 11V. The 9Z10PBF features a drain current of 10A and a drain-source voltage (VDS) of 350V. Its on-state resistance is 20mΩ.

Features and Benefits

• Ultra-low on-resistance relative to MOSFETs of any other manufacturing process
• Low gate charge
• High-current capacity
• Easy installation
• High-speed switching
• High current density

Applications

The IRF 9Z10PBF is suitable for a wide range of applications, especially those that require high-speed switching and/or low on-resistance. Common applications for the 9Z10PBF include:

• DC-to-DC converters
• Power management
• Motor and solenoid controls
• Logic level power switching
• High-speed switching

Working Principle

The working principle of the 9Z10PBF is based on the physical properties of metal-oxide-semiconductor (MOS) transistors. A MOS transistor consists of three layers of material: a gate, an insulation layer, and a substrate. During operation, the gate is polarized by a control voltage, while the substrate is charged with a potential difference, causing a channel to form underneath the insulation layer.

When a current passes through the channel, it generates a flow of electrons from the source to the drain as the electrons travel through the channel. The on-state resistance is determined by the width and length of the channel, as well as the gate voltage. When the gate voltage is increased, the channel is narrowed, thus increasing the on-state resistance.

The 9Z10PBF is designed with a logic level gate drive feature. This feature allows it to operate in both low-voltage (3.3V) and medium-voltage (5V) operating systems. This feature also allows for a lower on-state resistance, resulting in higher current and performance ratings.

Conclusion

The IRF 9Z10PBF is a versatile and reliable power MOSFET device that is suitable for a variety of applications. This device is designed with a high-current capacity and low on-resistance, making it ideal for switch-mode applications. Additionally, its logic-level gate drive feature allows it to operate in both low-voltage and medium-voltage systems. The 9Z10PBF is an excellent choice for DC-to-DC converters, motor and solenoid controls, and power management.