| Allicdata Part #: | IRF9362TRPBFTR-ND |
| Manufacturer Part#: |
IRF9362TRPBF |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET 2P-CH 30V 8A 8SOIC |
| More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 8A 2W Surface ... |
| DataSheet: |  IRF9362TRPBF Datasheet/PDF |
| Quantity: | 4000 |
| 1 +: | $ 0.17600 |
| 10 +: | $ 0.17072 |
| 100 +: | $ 0.16720 |
| 1000 +: | $ 0.16368 |
| 10000 +: | $ 0.15840 |
Specifications
| Vgs(th) (Max) @ Id: | 2.4V @ 25µA |
| Base Part Number: | IRF9362PBF |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 2W |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 21 mOhm @ 8A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A |
| Drain to Source Voltage (Vdss): | 30V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 P-Channel (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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IRF9362TRPBF is a single P-Channel Metal–Oxide–Semiconductor (MOSFET) transistor. It belongs to the family of Field Effect Transistors (FETs) and is designed to be integrated into a variety of applications, mainly to amplify or switch signals. IRF9362TRPBF is usually constructed with a combination of two MOSFETs, wherein one is used to increase the current and the other is used to serve as the switching device.The IRF9362TRPBF is renowned for its good resistance to water, high current and low power requirements. This FET is primarily used in high-power applications such as power amplifiers, power regulators, motor drivers, and car audio systems. It is also used in motor control circuits, RF switching, and low-noise amplifiers. In addition, it is also well-suited in applications that require high performance, low power consumption, and low noise. The construction of a FET is such that it creates a conductive channel between its two terminals in which current flows when there is a voltage applied. In the case of a P-type FET, such as the IRF9362TRPBF, the gate terminal is negative with respect to the rest of the FET, thus forming a P-type junction. The resulting P-channel is formed by the electrons in the N-channel being repelled by the negative gate. It is through this P-channel that current flows when the gate is activated with a positive voltage.One of the unique features of the IRF9362TRPBF is that it can withstand high temperatures, up to 200°C. This is due to the use of Advanced Power MOSFET (APM) technology which makes it highly stable against electromigration, making it suitable for use in demanding applications.One of the unique features of the IRF9362TRPBF is its provision for dual gate terminals. This allows for two types of control signals to be applied to the device, thereby enabling two distinct operating modes, namely drain current modulation (DCM) and source current modulation (SCM).In DCM mode, the gate voltage is adjusted to change the drain current, while in SCM mode, the gate voltage is used to regulate the source current. Therefore, this type of FET is particularly suitable for applications where the current needs to be continuously adjusted.The IRF9362TRPBF also features low thermal resistance, making it an ideal choice for power regulators, motor drivers, and other hot environments. Its low on-state resistance allows it to run at higher frequencies and draw lower power, thus increasing efficiency.In conclusion, the IRF9362TRPBF is a versatile FET that is suitable for a variety of power and signal amplifying applications. It is well-known for its excellent resistance to high temperatures, low on-state resistance, and its dual gate terminals, allowing for two distinct operating modes. Its wide range of applications include motor drivers, RF switching, power amplification, and low-noise amplifiers.
The specific data is subject to PDF, and the above content is for reference
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