IRF9910TR

Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	10A, 12A
Rds On (Max) @ Id, Vgs:	13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	900pF @ 10V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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<strong>IRF9910TR Application Field and Working Principle</strong>The IRF9910TR is a single-die assembly consisting of three independent logic-level N-channel MOSFETs. These power transistors are ideally suited for use in high-side switch and other applications where ease of use, reliable operation and cost are factors.<strong>Application Field</strong>The IRF9910TR is a highly reliable switching device that is suitable for loads up to 20 Amps at voltages up to 100 Volts. The FETs are capable of higher voltage operation (up to 500 Volts) when used in breakdown protection circuits. These devices provide fast switching performance, immunity to noise and good load handling characteristics.The IRF9910TR is used in a wide range of applications including:- Automotive applications, such as switch-mode power supplies for automotive electronics and DC/DC converters- Household appliances, such as washing machines, dishwashers and other electrical devices- Industrial applications, such as switch-mode power supplies, UPS systems and power supply control- Telecommunications equipment, including base stations and servers<strong>Working Principle</strong>The IRF9910TR device is a high performance N-channel logic-level metal oxide semiconductor field-effect transistor (MOSFET). It consists of three MOSFETs in a single package, with each transistor capable of switching up to 20 Amps at voltages up to 100 Volts.The working principle of the IRF9910TR is simple. The gate voltage is used to control the conductive state of the device. When the gate voltage exceeds the threshold voltage, a “channel” is formed between the source and drain and current flows. The IRF9910TR features an integrated protection diode that prevents the device from being damaged during overvoltage conditions or when it is used in a flyback switching configuration.The combination of the IRF9910TR’s low gate threshold, high current capability and integrated protection diode makes it an ideal choice for power applications. It offers excellent switching performance and is suitable for use in a wide range of AC/DC and DC/DC applications.

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