| Allicdata Part #: | IRF9630PBF-ND |
| Manufacturer Part#: |
IRF9630PBF |
| Price: | $ 0.95 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 200V 6.5A TO-220AB |
| More Detail: | P-Channel 200V 6.5A (Tc) 74W (Tc) Through Hole TO-... |
| DataSheet: |  IRF9630PBF Datasheet/PDF |
| Quantity: | 2406 |
| 1 +: | $ 0.94500 |
| 10 +: | $ 0.91465 |
| 100 +: | $ 0.86266 |
| 1000 +: | $ 0.78019 |
| 10000 +: | $ 0.62935 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 74W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 3.9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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Introduction
The IRF9630PBF is a field-effect transistor (FET) that is one of the most popular and commonly used FETs in various types of electronic devices and circuits. It has the advantages of being able to handle large amounts of current, having high switching frequencies, and having little distortion. It has been used for power switching devices for many decades, and has become an integral part of today\'s electronics.Application Field
The IRF9630PBF can be used in a wide variety of applications where its features make it ideal. It is commonly used in audio amplifiers, motor control, power switching and power conversion circuits, vehicle lighting, communications equipment, and in computer and gaming console controllers. It can also be used in LED drivers, power supplies, and motor switching and control circuits.Structure
The IRF9630PBF is a three-terminal FET, consisting of a source, gate and drain. The source and drain are made of a n-type semiconductor material and the gate is made of a p-type material. It has a low on-resistance and a high off-resistance. On the outside, it has a metal oxide film covering the semiconductor material, which helps protect the FET from damage due to static electricity.Working Principle
The working of the IRF9630PBF is based on the principle of gate biasing. The source and drain are normally conductive and only require a low voltage in order to conduct current. The voltage applied to the gate controls the amount of current that flows through the FET. When positive potential is applied to the gate, it attracts electrons forming a channel between the source and drain. This increases current flow between the two terminals, effectively turning the device "on". When the voltage applied to the gate is reversed, it reverses the polarity of the electrons in the channel, effectively turning the device "off".Conclusion
The IRF9630PBF is a popular, reliable, and versatile FET which has been used in a wide range of electronic applications for many decades. It can handle high currents, has high switching frequency, and has little distortion. Its main advantage is its ability to work with both analog and digital signals. It has a low on-resistance and a high off-resistance, and is protected from static electricity by an outer metal oxide coating. The working principle of the device is based on gate biasing, which allows for the control of current flow through the FET.The specific data is subject to PDF, and the above content is for reference
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