IRF9Z14STRL Allicdata Electronics
Allicdata Part #:

IRF9Z14STRL-ND

Manufacturer Part#:

IRF9Z14STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 6.7A D2PAK
More Detail: P-Channel 60V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Surfac...
DataSheet: IRF9Z14STRL datasheetIRF9Z14STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF9Z14STRL is a single-input N-channel enhancement and depletion power MOSFET, which is suitable for a wide range of applications. It has a maximum drain current (ID) of 8A and a drain to source on-resistance of 6.5 mΩ at a 4.5V VGS.

The IRF9Z14STRL MOSFET is a vertical DMOS FET with an integral reverse-diode design for low on-state resistance, high peak current capability, and fast switching times. Its low on-state resistance and fast switching times make it ideal for many power supply and switching applications.

The IRF9Z14STRL also features an integral reverse-diode design, allowing the device to be used as a high frequency switch in many applications such as mobile phone amplifiers. It is also suited for high power DC-DC power converters, high efficiency DC-AC inverters, and high speed optical switches.

The IRF9Z14STRL has an off-state drain to source on-resistance (RDS(on)) of 8mΩ at a 4.5V gate to source voltage (VGS). It also has a gate to source threshold voltage (Vth) of -1.0V and a gate to drain capacitance (Cgd) of 0.8pF.

The IRF9Z14STRL has a maximum drain to source breakdown voltage (BVdss) of 100V, making it ideal for use in higher voltage applications. It also has a maximum gate to source voltage (Vgs) of ±20V and a maximum power dissipation (PD) of 16W.

The main working principle of the IRF9Z14STRL is based on the MOSFET\'s capability to act as a voltage-controlled switch. The IRF9Z14STRL has a channel doping profile that provides for both enhancement and depletion mode of operation. This allows the device to be used in both AC and DC power supply applications. The device is operated by applying an appropriate gate voltage, which modifies the current flow through the channel. This in turn changes the voltage drop across the device and the current through it.

The IRF9Z14STRL can also be used in flyback, push-pull, and half-bridge DC-DC converters, high speed switching in power control applications, and fast switching times in DC-AC inverters. In addition, it can be used for switching logic ICs, amplifiers, and other electronic components, as well as providing protection for sensitive electronic components from over-voltage and over-current conditions. Furthermore, the device can be used for automotive applications that require high current input and output, such as Linear LDO regulators, power switching DC-DC converters, and motor controllers.

In summary, the IRF9Z14STRL is a versatile single-input N-channel enhancement and depletion MOSFET that is suitable for a wide range of applications. It has a low on-state resistance, a reverse diode design, and fast switching times, making it ideal for high speed switching applications. The device can also be used in DC-DC converters, DC-AC inverters, motor controllers, and other power supply applications.

The specific data is subject to PDF, and the above content is for reference

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