IRF9Z30PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

An IRF9Z30PBF is a type of Field-Effect Transistor (FET) based on metal-oxide semiconductor technology. It has three leads, including a source, a drain and a gate. It acts as a switch and performs linear and switching operations.

A Field-Effect Transistor (FET) is a three-terminal device that uses an electric field to control the operation of a circuit. It has low power dissipation and can switch at high frequencies, making it suitable for applications in high frequency communications, power electronics and switching power supplies. FETs are available in two varieties - Junction Field-Effect Transistors (JFETs) and Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs). An IRF9Z30PBF belongs to the latter.

The IRF9Z30PBF is an N-Channel Enhancement-Mode MOSFET. The "N-Channel" indicates that current flow is controlled by a voltage applied to its Gate terminal. The "Enhancement Mode" indicates that the Gate voltage threshold level required to turn the device on is typically low. This MOSFET has an RDS-on rating of 36mΩ and a maximum drain current rating of 30A. It offers the user a relatively low gate-source voltage with a very low on-resistance of 36mΩ. With its low power dissipation and high frequency switching capabilities, the IRF9Z30PBF is well-suited for use in high-current and high-speed switching applications.

The working principle of an IRF9Z30PBF is relatively simple. When a low voltage is applied to the Gate terminal, an electric field is created. This electric field modulates the current-carrying channel between the Source and Drain terminals, effectively turning the device on. The electric field created by the Gate terminal also actuates the Source terminal and modulates the current flowing between the Source and Drain terminals, effectively turning the device off.

In summary, the IRF9Z30PBF offers high-current and high-speed switching capabilities that make it attractive for various electronic applications, including high-frequency communication equipment, automotive electronics, industrial controls and robotics. Its low power ratings and relatively low gate-source voltage make it a cost-effective solution for many power electronics applications.

The specific data is subject to PDF, and the above content is for reference