IRF9530NSTRLPBF Allicdata Electronics
Allicdata Part #:

IRF9530NSTRLPBFTR-ND

Manufacturer Part#:

IRF9530NSTRLPBF

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 100V 14A D2PAK
More Detail: P-Channel 100V 14A (Tc) 3.8W (Ta), 79W (Tc) Surfac...
DataSheet: IRF9530NSTRLPBF datasheetIRF9530NSTRLPBF Datasheet/PDF
Quantity: 2400
1 +: $ 0.48000
10 +: $ 0.46560
100 +: $ 0.45600
1000 +: $ 0.44640
10000 +: $ 0.43200
Stock 2400Can Ship Immediately
$ 0.48
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF9530NSTRLPBF, a type of power MOSFET from the Infinite Resistance Field (IRF) family, is a vertical field-effect transistor that is nominally a N-channel enhancement-mode product. IRF9530NSTRLPBF has a maximum drain current of 3.8A and maximum drain-source voltage of 30V. This device has a relatively low on-state resistance, making it a great alternative for driving loads with a minimum power dissipation. The device can be used as an amplifier or a switch, opening and closing a gate to allow current to pass.

IRF9530NSTRLPBF can be found in many applications, from low-power switching circuits in consumer electronics to high-end industrial applications. For example, it can be used in power control systems, such as for motor controls and HVAC systems. It is also used for power management related circuits, providing efficient control and power management of digital circuits. The device is also found in automotive and automotive-related systems, such as engine control modules, ABS modules, and powertrain systems, among others.

Working Principle

IRF9530NSTRLPBF works in a similar way to other MOSFETs, but it has additional features that make it a great choice for power control and switching. The device has a basic construction that consists of four layers of metal, silicon, and metal oxide sandwiched between source, gate, and drain electrodes. The metal gates create a capacitor that stores charge and control the current flow, allowing the device to be used for on/off applications. In addition, the metal oxide layer further controls the current flow, allowing for more precise control.

When the device is powered on, the metal gates become charged, which creates an electrical field which increases the conductivity between the source and drain. The electrical field also creates a barrier that prevents current from flowing in the reverse direction. When the device is powered off, the charge dissipates and the current flow is completely reversed, effectively blocking out any current flow.

The IRF9530NSTRLPBF also has an additional feature that enables the user to control the current flow. The device has a voltage drop function that can be used to reduce the current flow that is passing through the device. This is helpful in applications where precise current control is required, such as when driving low-power loads like LEDs or low-power motors.

Overall, the IRF9530NSTRLPBF is a great device for use in various types of power control and switching applications. With its low on-state resistance and voltage drop function, the device is able to provide efficient power control and precise current control. Therefore, the device is a great option for many applications, from consumer electronics to automotive systems.

The specific data is subject to PDF, and the above content is for reference

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