IRF9335PBF

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IRF9335PBF is a N-channel MOSFET, which stands for metal oxide semiconductor field effect transistor. MOSFET is a type of transistor used in electronic circuits in which current flows between drain and source terminals. MOSFETs are unipolar devices, meaning that only a single polarity of the supply voltage is needed to be applied to them. The IRF9335PBF belongs to the family of Vishay MOSFETs and is a 3-terminal device, comprising of drain, source and gate. It is specifically designed to drive inductive and power loads.

The IRF9335PBF is widely used for switching, amplifying, and voltage clamping purposes in a number of applications. It is particularly suitable for automotive, circuit-breaker, and industrial automation applications. It can also be used in lighting and general power control.

This MOSFET has been designed to handle up to 20A and 100V. Its forward transfer admittance is 0.44 S and its on-state resistance is 4.8 mOhms at maximum temperature (T max) of 150 degrees Celsius at 10V drain-source voltage. The maximum operating temperature range of the device is -55 to +150 degrees Celsius.

It is a depletion mode type of transistor. In a depletion mode transistor, the channel between the source and drain is always on, allowing low resistance current flow between the two terminals. In the case of the IRF9335PBF, the gate needs to be positively biased to reduce the current flow. If the voltage applied to the gate is negative, then the device turns off.

This transistor also features an avalanche energy rated of 7mJ. Avalanche energy rating is a measure of a MOSFET’s capability to withstand surge current, measured at a particular voltage, temperature and time. The avalanche energy rating should be considered when the device is used in a circuit that is subjected to surge shock or extreme transient conditions.

The IRF9335PBF is an ideal solution for medium- to high-power applications, and its wide operating range makes it suitable for applications where the power requirements vary with temperature, supply voltage and other parameters.

This transistor is available in a variety of package types, such as TO-252, TO-206, IPAK, and TO-220. It is also available in a low-profile (1.2mm) package, enabling designers to design systems with minimal space requirements.

This device is packaged in a plastic material rated UL94V-0, which meets industry standards for flame retardancy, insulation and dielectric strength. It meets the requirements for RoHS compliant and contains no hazardous or banned materials.

In summary, the IRF9335PBF is a widely used N-channel MOSFET designed for medium- to high-power applications. It features an avalanche energy rated of 7mJ, is able to handle up to 20A and 100V, and has an on-state resistance of 4.8 mOhms at maximum temperature. It is available in a variety of package types and is flame retardant, RoHS compliant, and contains no hazardous or banned materials.

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