| Allicdata Part #: | IRF9610STRR-ND |
| Manufacturer Part#: |
IRF9610STRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 200V 1.8A D2PAK |
| More Detail: | P-Channel 200V 1.8A (Tc) 3W (Ta), 20W (Tc) Surface... |
| DataSheet: |  IRF9610STRR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3W (Ta), 20W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 900mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRF9610STRR is a vertical double-diffused metal-oxide-semiconductor field-effect transistor (MOSFET), which was developed by International Rectifier Corporation. It is manufactured in an 800V Part Number (PN) package, and has a drain-source voltage of 80V and a peak current of 12 Amperes. IRF9610STRR is the latest technology MOSFET, designed to provide high switching efficiency and power levels.
The application fields of IRF9610STRR include motor control, power supply systems, industrial electronics, automotive electronics and telecommunication systems. Its excellent switching characteristics, low on-state resistance and gate drive circuit compatibility make it suitable for a variety of applications.
The working principle of IRF9610STRR is similar to that of any other MOSFET. It is based on the movement of electrons between two terminals and their interaction with the gate electrode. When a positive potential is applied to the gate electrode, the source-drain voltage increases, pulling electrons from the source to the drain. As a result, a current flows from the drain to the source.
The IRF9610STRR is also able to reduce switching losses by providing an exceptionally low on-state resistance. This is achieved by the vertical double-diffused structure which spreads out the electric field, reducing the resistance and increasing switching efficiency.
The IRF9610STRR also has superior temperature characteristics. It has a low thermal resistance junction-to-case, allowing it to dissipate heat better than standard MOSFETs. This helps to maintain excellent performance even when operating at high temperatures.
Due to its excellent properties, the IRF9610STRR is ideal for a wide range of applications, including motor control, power supply systems, industrial electronics, automotive electronics, and telecommunication systems. Its efficient switching capability, low on-state resistance and gate drive circuit compatibility enable it to provide superior performance in all of these applications.
The specific data is subject to PDF, and the above content is for reference
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