IRF9Z34 Allicdata Electronics
Allicdata Part #:

IRF9Z34-ND

Manufacturer Part#:

IRF9Z34

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 18A TO-220AB
More Detail: P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-22...
DataSheet: IRF9Z34 datasheetIRF9Z34 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF9Z34 MOSFET is a single N-Channel MOSFET that enables high speed applications for the user. It offers a number of features, such as low-gate charge, high-speed saturation, dynamic dv/dt rating and excellent on-resistance. This device can be used in a variety of applications, from high speed switching, to voltage level shifted gate drive and power routing. This article will look at the various application fields and also the working principle of the IRF9Z34.

Application Fields

The IRF9Z34 is often used in power switching and level shifters, where low on-resistance and high bandwidth are required. The device is capable of switching loads of up to 30V, making it ideal for level shifting, power routing, and even low profile systems. It is also widely used in radio frequency (RF) circuits, where it can be used as a switch or an amplifier.

The IRF9Z34 is also suitable for high-speed switching. It has a maximum turn-on time of 700ns, and a maximum turn-off time of 900ns, making it perfect for applications that require quick switching. This makes it suitable for motor control and load switching, and for switching in high-speed microprocessor and memory systems.

The IRF9Z34 is also capable of very low gate charge operation, which is ideal for applications that require very low input power. This makes it a suitable choice for battery-powered applications, as well as low-power systems.

Working Principle

The IRF9Z34 works via the use of a metal oxide semiconductor field-effect transistor (MOSFET). This type of transistor is capable of controlling electrical current simply by altering the applied voltage to a gate electrode. The gate is the control element of the transistor, and it is capable of controlling the current flow between the source and the drain of the transistor. When the gate voltage is increased, the channel between the source and drain is opened, allowing current to flow.

The IRF9Z34 is capable of operating at a wide range of gate voltages, making it very versatile. It is also capable of sustaining very high voltage spikes, making it ideal for use in high-voltage circuit applications.

The MOSFET used in the IRF9Z34 also offers a number of other advantages. It is capable of sustaining very high dv/dt ratings, which makes it suitable for fast switching applications. It also has a very low gate charge, which makes for efficient switching. Furthermore, it has an excellent on-resistance, which makes it suitable for power applications.

Conclusion

In conclusion, the IRF9Z34 is a versatile single N-Channel MOSFET that can be used in a number of applications. It is capable of high-speed switching and also level shifting, making it perfect for high-speed microprocessor systems. It also has a low gate charge and an excellent on-resistance, making it suitable for power applications. Additionally, it is capable of sustained high-voltage spikes, making it suitable for applications that require high voltage inputs. All these features make the IRF9Z34 an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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