Allicdata Part #: | IRF9Z34-ND |
Manufacturer Part#: |
IRF9Z34 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 18A TO-220AB |
More Detail: | P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-22... |
DataSheet: | IRF9Z34 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 88W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF9Z34 MOSFET is a single N-Channel MOSFET that enables high speed applications for the user. It offers a number of features, such as low-gate charge, high-speed saturation, dynamic dv/dt rating and excellent on-resistance. This device can be used in a variety of applications, from high speed switching, to voltage level shifted gate drive and power routing. This article will look at the various application fields and also the working principle of the IRF9Z34.
Application Fields
The IRF9Z34 is often used in power switching and level shifters, where low on-resistance and high bandwidth are required. The device is capable of switching loads of up to 30V, making it ideal for level shifting, power routing, and even low profile systems. It is also widely used in radio frequency (RF) circuits, where it can be used as a switch or an amplifier.
The IRF9Z34 is also suitable for high-speed switching. It has a maximum turn-on time of 700ns, and a maximum turn-off time of 900ns, making it perfect for applications that require quick switching. This makes it suitable for motor control and load switching, and for switching in high-speed microprocessor and memory systems.
The IRF9Z34 is also capable of very low gate charge operation, which is ideal for applications that require very low input power. This makes it a suitable choice for battery-powered applications, as well as low-power systems.
Working Principle
The IRF9Z34 works via the use of a metal oxide semiconductor field-effect transistor (MOSFET). This type of transistor is capable of controlling electrical current simply by altering the applied voltage to a gate electrode. The gate is the control element of the transistor, and it is capable of controlling the current flow between the source and the drain of the transistor. When the gate voltage is increased, the channel between the source and drain is opened, allowing current to flow.
The IRF9Z34 is capable of operating at a wide range of gate voltages, making it very versatile. It is also capable of sustaining very high voltage spikes, making it ideal for use in high-voltage circuit applications.
The MOSFET used in the IRF9Z34 also offers a number of other advantages. It is capable of sustaining very high dv/dt ratings, which makes it suitable for fast switching applications. It also has a very low gate charge, which makes for efficient switching. Furthermore, it has an excellent on-resistance, which makes it suitable for power applications.
Conclusion
In conclusion, the IRF9Z34 is a versatile single N-Channel MOSFET that can be used in a number of applications. It is capable of high-speed switching and also level shifting, making it perfect for high-speed microprocessor systems. It also has a low gate charge and an excellent on-resistance, making it suitable for power applications. Additionally, it is capable of sustained high-voltage spikes, making it suitable for applications that require high voltage inputs. All these features make the IRF9Z34 an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IRF9520 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 6.8A TO-... |
IRF9610 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A TO-... |
IRF9530 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A TO-2... |
IRF9620 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 3.5A TO-... |
IRF9540 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 19A TO-2... |
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IRF9Z14 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 6.7A TO-2... |
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IRF9510S | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 4A D2PAK... |
IRF9520NS | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9520S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9520STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9530NS | Infineon Tec... | -- | 1000 | MOSFET P-CH 100V 14A D2PA... |
IRF9530S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9540S | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9540STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9610S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A D2P... |
IRF9620S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 3.5A D2P... |
IRF9630S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 6.5A D2P... |
IRF9640S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 11A D2PA... |
IRF9640STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 11A D2PA... |
IRF9Z14S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 6.7A D2PA... |
IRF9Z24 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 11A TO-22... |
IRF9Z24NS | Infineon Tec... | -- | 1000 | MOSFET P-CH 55V 12A D2PAK... |
IRF9Z24S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 11A D2PAK... |
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