| Allicdata Part #: | IRF9530L-ND |
| Manufacturer Part#: |
IRF9530L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 100V 12A TO-262 |
| More Detail: | P-Channel 100V 12A (Tc) Through Hole I2PAK |
| DataSheet: | IRF9530L Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 7.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IRF9530L is an N-Channel enhancement-mode MOSFET comprised of a depletion-mode vertical DMOS channel, designed for use in higher power applications. This device is one of the numerous field-effect transistors (usually referred to as FETs) available for use. The IRF9530L is motivated to operate in either the enhancement-mode or depletion-mode.
IRF9530L Application Field
The most common application of the IRF9530L is within the power converters world. This type of device acts as a switch in many applications related to switched-mode power supplies (SMPS). These can be implemented in AC and DC switching power converters, and can be used to produce high efficiency and/or low EMI power converters as is desired by the application.
Another application field that the IRF9530L can be applied to is that of DC motor drives. This type of FET is suitable for AC induction motor drives and sensorless DC motor drives. It can also be implemented in the design of power inverters and other AC motor applications. It is also suitable to be applied to various electronic ballast products, including electronic lighting ballast, electronic transformer, low-frequency AC power supply, and voltage regulators.
The IRF9530L can be also used in power switching applications and other load control designs. It is suitable for use in HID lighting applications, transducers, robotics and many circuits with inductive loads. As this is an N-Channel FET it can be used to drive LEDs by controlling the current through them.
IRF9530L Working Principle
The IRF9530L works as a switch, turning the current flow in a circuit on and off according to the voltage applied to the gate. This type of device is an enhancement-mode MOSFET which means that the device can be switched off by applying a voltage to the gate terminal that is lower than the threshold voltage. The IRF9530L will remain off, or in a non-conducting state, until a higher voltage is applied to the gate. This type of device is ideal for many power applications and loaded circuits where power must flow in an off-state or on-state or be controlled.
The IRF9530L is a power MOSFET device, meaning that it is designed to handle big amounts of electric current although it is a small physical device. It is able to switch multiple amps of power in nanoseconds, which is a notable improvement over traditional mechanical relays. The main advantages of implementing FETs in power appliactions include high and consistent switching speed, low power losses, exponential gate current-controlled switching operation and more.
The specific data is subject to PDF, and the above content is for reference
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IRF9530L Datasheet/PDF