
Allicdata Part #: | IRF9358TRPBFTR-ND |
Manufacturer Part#: |
IRF9358TRPBF |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 30V 9.2A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 9.2A 2W Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.60000 |
10 +: | $ 0.58200 |
100 +: | $ 0.57000 |
1000 +: | $ 0.55800 |
10000 +: | $ 0.54000 |
Vgs(th) (Max) @ Id: | 2.4V @ 25µA |
Base Part Number: | IRF9358PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 1740pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 16.3 mOhm @ 9.2A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.2A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF9358TRPBF is an integrated circuit composed of power field-effect transistors (FETs). It is designed to be flexible and to allow a wide range of applications and working principles. It is characterized by low on-state resistance, low gate charge and high current ratings. In addition, it is also capable of very high switching speed.
The IRF9358TRPBF belongs to a class of power FETs known as MOSFET arrays. This type of transistor array utilizes multiple MOSFETs in a single package. In these arrays, each individual MOSFET is contained within the same substrate, making them easy to interconnect. This type of power transistor array can be used for several different applications, such as backlighting and motor control.
The IRF9358TRPBF also includes several other features that make it a great choice for power applications. It contains an integrated charge pump, which provides voltage regulation from 5.0V to 40V. It also features an embedded gate driver which allows the device to be controlled easily. The device is ESD protected, which helps reduce the risk of electrical shocks. Finally, the array is configured in a dual-in-line package, which helps to reduce cost and size.
The IRF9358TRPBF operates on the principle of enhancing-mode MOSFETs. It works based on the principle of gate injection. When a voltage is applied to the gate of the MOSFET, electrons are injected into the channel region below the gate. This increases the conductivity of the channel, allowing current to flow freely. This operation can be reversed by applying a negative voltage to the gate, which will reduce the conductivity of the channel and shut off the current flow.
The IRF9358TRPBF has a variety of applications in motor control, lighting control, and power conversion. It is commonly used in backlighting applications, due to its low on-state resistance, low gate charge and high current ratings. It is also used in motor control systems, as its switching speed allows for precise and accurate motor control. Finally, it is used for power conversion as it offers good voltage regulation and high efficiency.
The IRF9358TRPBF is an effective and reliable integrated circuit which offers both flexibility and performance. It features a wide range of applications and working principles, making it an ideal choice for many power applications. Its embedded gate driver, charge pump and voltage regulation features make it well suited for backlighting, motor control and power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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IRF9610L | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 1.8A TO-... |
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IRF9620L | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 3.5A TO-... |
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IRF9610S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A D2P... |
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