IRF9530NSPBF Allicdata Electronics
Allicdata Part #:

IRF9530NSPBF-ND

Manufacturer Part#:

IRF9530NSPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 100V 14A D2PAK
More Detail: P-Channel 100V 14A (Tc) 3.8W (Ta), 79W (Tc) Surfac...
DataSheet: IRF9530NSPBF datasheetIRF9530NSPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRF9530NSPBF is a MOSFET that belongs to a widely used family of single field-effect transistors. It has many uses, but it is mainly used in applications that require high voltage operation. These applications include switching power supplies, automotive systems, and in some cases solar panel systems. The IRF9530NSPBF has many features and benefits, which have made it a popular choice for many applications.

The IRF9530NSPBF is a N-channel Generation IV MOSFET based on the PowerMOSFET technology. It has a very low rDS (on) of 3 ohms max, making it one of the lowest in PowerMOSFETs. The drain-source breakdown voltage is up to 100 V, allowing this MOSFET to operate efficiently in higher voltage applications. The gate driver rated drain current is up to 2.4 A and the maximum drain current is 10 A, allowing for a wide range of applications. Additionally, this MOSFET has a maximum operating temperature of 175 degrees Celsius. This is important as some applications will require high heat tolerance.

The IRF9530NSPBF’s working principle is fairly simple to understand. The datasheet provides the detailed information, but basically it works in the same way as other MOSFETs. There is a gate, drain and source terminal. When a voltage is applied to the gate, the transistor is turned ON and charges pass between the source and drain terminals. This is due to the electron flow that is created by the electric field generated by the charged gate. In other words, the gate voltage controls the current flow between the two terminals.

Overall, the IRF9530NSPBF is a great choice for many applications that require high voltage operation. It has a very low rDS (on) of 3 ohms max, a maximum drain current of 10 A, and a maximum operating temperature of 175 degrees Celsius. With its many features and excellent performance, it has become a popular choice in many industries. Lastly, its working principle is easy to understand and very reliable in operation.

The specific data is subject to PDF, and the above content is for reference

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