Allicdata Part #: | IRF9383MTR1PBFTR-ND |
Manufacturer Part#: |
IRF9383MTR1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 22A DIRECTFET |
More Detail: | P-Channel 30V 22A (Ta), 160A (Tc) 2.1W (Ta), 113W ... |
DataSheet: | IRF9383MTR1PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.4V @ 150µA |
Package / Case: | DirectFET™ Isometric MX |
Supplier Device Package: | DIRECTFET™ MX |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 113W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7305pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 160A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF9383MTR1PBF is a three-terminal, n-channel silicon field effect transistor (FET), which is suitable for a broad range of applications. It is especially useful in digital switching, level shifting, and other amplifier, logic and signal management applications. Its construction and design make it particularly suitable for use in automotive environments where there is a need for extreme temperature and environmental reliability.
IRF9383MTR1PBF Application Field
This device is an ideal solution for many applications requiring efficient and reliable signal switching, amplification and conditioning. Applications where its features prove advantageous, such as automotive and industrial electronics, include:
- Automotive electronics
- Industrial electronics
- Switch mode power supplies
- Consumer electronics
- Computer systems
- Data communications
- Industrial and Medical Imaging
- Audio power amplifiers
- High-speed switching circuits and logic gates
- Process control
- Telecommunication networks
IRF9383MTR1PBF Working Principle
IRF9383MTR1PBF works by using the unique characteristics of a MOSFET, a type of field effect transistor. To understand the working principle of this component, some information about the structure of a MOSFET is important. A MOSFET’s structure is composed of three terminals; the gate, the source and the drain. The gate terminal is used to control the current flow between the source and the drain, depending on the electric field created by the gate which determines the current flow. The range of electric field between the gate and the source-drain region is called the ‘threshold voltage’, which is the difference between the gate voltage and the source-drain voltage.
In IRF9383MTR1PBF, when the source-drain voltage is increased above the threshold voltage, the current flow between the source and drain increases while the gate voltage stays constant. The resulting current is an exponential function of the threshold voltage. This component is used to control large amounts of current anywhere in the range of 1A to 10A with a gate- source voltage of just 4.5V.
To summarise, the functioning of this component relies on the electric field created by the gate voltage to control the current flow between the source and drain. By controlling the current in this way, the component is able to generate specific steady currents that can be used for any number of applications.
The specific data is subject to PDF, and the above content is for reference
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