
Allicdata Part #: | IRF9520L-ND |
Manufacturer Part#: |
IRF9520L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 6.8A TO-262 |
More Detail: | P-Channel 100V 6.8A (Tc) Through Hole I2PAK |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF9520L is an n-channel enhancement-mode power MOSFET, optimized for applications requiring high performance and reliability. It is ideal for power management and regulation in high-frequency, high-current, high-voltage applications such as PC power supplies and automotive electronics.
This MOSFET is capable of withstanding high voltages and offers a combination of fast switching and low on-state resistance (RDS(ON)). It is capable of withstanding + 250V drain-source breakdown voltages and can be used in high-performance applications such as DC-DC converters, motor controllers and power management.
The IRF9520L operates on a logic level gate drive, allowing for high efficiency and fast switching speeds. It offers an operating frequency of up to 1 MHz, allowing for fast transitions between different operating states. It also features a low gate charge of 36 nF, making it suitable for pulse width modulation circuits.
The IRF9520L features dynamic dV/dt, (dV/dt) rating of 500V/ns, making it suitable for high-current applications. This high dV/dt capability helps reduce switching losses, improve conduction efficiency and increase power density.
The exceptional thermal performance of the IRF9520L is due to its Low-Rth(j-c) thermal resistance and its metal-oxide semiconductor field-effect transistor (MOSFET) structure. The metal-oxide semiconductor structure ensures low channel resistance, allowing for better heat dissipation and lower operating temperature.
IRF9520L also features an integrated reverse avalanche diode, allowing for high-speed reverse recovery. This helps improve overall circuit performance and reliability. The diode is designed for high voltage, high temperature and convenience of use, making it suitable for a variety of applications.
The IRF9520L is suitable for a variety of purposes, including DC-DC converters, voltage regulator modules (VRMs), motor control, and power management. It is available in packages ranging from TO-263A to SOT-223. The device is manufactured using an advanced fabrication process to ensure robust performance, superior electrical characteristics and reliable operation.
In Summary, The IRF9520L is an advanced n-channel enhancement-mode power MOSFET, optimized for applications requiring high performance and reliability. It is a cost-effective solution for power management and regulation in high-frequency, high-current, high-voltage applications such as PC power supplies and automotive electronics. It offers excellent thermal performance, high voltage and current handling capabilities, and fast switching speeds. The integrated reverse avalanche diode allows for superior performance and reliability. It is suitable for a variety of purposes, including DC-DC converters, voltage regulator modules (VRMs), motor control, and power management.
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