IRF9383MTRPBF

Vgs(th) (Max) @ Id:	2.4V @ 150µA
Package / Case:	DirectFET™ Isometric MX
Supplier Device Package:	DIRECTFET™ MX
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 113W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7305pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	2.9 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta), 160A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to IRF9383MTRPBF

IRF9383MTRPBF is a N-channel metal oxide semiconductor field effect transistor of the Enhancement mode. It is a short form of Insulated Gate Bipolar Transistor, and it is the most commonly used type of MOSFET. It is produced by the manufacturer IRF, and it is a part of Infineon’s product line.This N-channel MOSFET is offered in through-hole mounting. It is designed to support voltage levels up to 80V, and it is capable of producing a current of up to 36A. It is released on a 9 pin PSOP package and its lead length is 5.5 mm.The IRF9383MTRPBF is a versatile device. It is ideal for switching applications, amplifier stages and power processing tasks. It is one of the most popular choices for power‐switching applications, such as dc/dc converters, switching power supplies and motor drives.

IRF9383MTRPBF Application Fields

The IRF9383MTRPBF is a MOSFET of the Enhancement type. It is primarily used in applications which require high current and voltage switching. Some of the most common applications of IRF9383MTRPBF are:•DC/DC converters•Power inverters•Switching power supplies•Motor drives•DC motor controls•DC/AC converters•High side switching•LED Drivers•Switching voltage regulators•Voltage regulation•Magnetic field applications

IRF9383MTRPBF Working Principle

The IRF9383MTRPBF is a N-channel enhancement mode MOSFET. It works based on the principle of the MOSFET, which is one of the most commonly used switching devices.MOSFETs are three-terminal devices that control the flow of electrons in an electric circuit. The gate voltage of the MOSFET is used to control the flow of electrons through the transistor. A positive gate voltage will cause electrons to flow through the transistor, while a negative gate voltage will stop the flow of electrons.The IRF9383MTRPBF works by having a gate voltage applied to it. This gate voltage will then control the flow of electrons through the MOSFET, allowing the user to switch large currents. When the gate voltage of the MOSFET is increased, the transistor will be triggered and the current will flow through the transistor. This is known as the ‘on’ state. With the IRF9383MTRPBF, the gate voltage will need to be at least 0.5V to trigger the transistor. When the gate voltage is sufficiently high, the current will be able to flow freely through the MOSFET. The maximum voltage that the IRF9383MTRPBF can handle is 80V, so it is ideal for high voltage applications.

Conclusion

The IRF9383MTRPBF is a versatile N-channel MOSFET. It is designed to handle up to 80V and 36A, making it ideal for high voltage, high current switching applications. It is commonly used in applications such as dc/dc converters, switching power supplies, motor drives, and voltage regulation.The working principle of the IRF9383MTRPBF is based on the MOSFET. The gate voltage is used to control the flow of electrons through the MOSFET. When the gate voltage is sufficiently high, the current will flow through the transistor. This makes it an ideal choice for high voltage, high current applications.

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