IRF9Z34PBF Allicdata Electronics
Allicdata Part #:

IRF9Z34PBF-ND

Manufacturer Part#:

IRF9Z34PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 18A TO-220AB
More Detail: P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-22...
DataSheet: IRF9Z34PBF datasheetIRF9Z34PBF Datasheet/PDF
Quantity: 1435
Stock 1435Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRF9Z34PBF is an enhancement-type, radial, field-effect transistor (FET), specifically a metal–oxide–semiconductor field-effect transistor (MOSFET). This particular FET is used in a variety of applications, both for industrial and consumer products. It is a single device, which means that just one MOSFET does the job necessary. The specific technology used to make the device gives it a number of advantages, including high-speed switching, high switching capacity, and low input capacitance. The device is also able to handle large amounts of power, making it a useful tool in power management.

The device gets its name from the radial or “round” shape of the source, gate, and drain connections. The height of the device makes it useful in high-density circuit boards, and its small size makes the installation easier. The IRF9Z34PBF is typically used in very low leakage current circuits, as well as for fast switching in low power applications. It can also be used in high current, high speed switching applications.

In order to understand how the device works, it is necessary to first understand the principles of a MOSFET. There are three parts to a MOSFET- the source, the gate, and the drain. The source is part of the channel through which electrons flow to the drain. The gate is like a “gatekeeper”, blocking or allowing the flow of electrons as needed. By applying an electric field to the gate, it is possible to control the conductivity of the channel and thus the flow of electrons between the source and the drain.

The IRF9Z34PBF provides the user with a number of advantages when using the device. For example, it is able to provide high drain-source switched capacitor rates, high drain-source capacitance, and low on-resistance. It can also handle high load currents and provide a low forward voltage drop. In addition, some models of this device will also provide very low gate charge, which can make it more efficient than some other MOSFETs. It also comes with an overcurrent protection feature that helps prevent damage to the device.

The IRF9Z34PBF is used in a wide range of applications, such as motor control, DC-DC conversion, battery charging and discharging, electro-magnetic interference suppression, and even dimming control. It has been used in a range of products, including relays, circuit breaker and circuits, rectifiers, diodes, integrated circuits, timers and lamps. The IRF9Z34PBF has been tested and certified by various safety and quality organizations, such as the International Electrotechnical Commission (IEC), Underwriters Laboratories (UL), and the European Economic Union (EEU).

In conclusion, the IRF9Z34PBF is a reliable, efficient and effective MOSFET which is suitable for use in a variety of applications. Its small size and high capability make it a great choice for nearly any type of application. The device is also very safe, thanks to its overcurrent protection feature, and it has been certified by many safety and quality organizations. Its performance and safety make the IRF9Z34PBF an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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