Allicdata Part #: | IRF9530S-ND |
Manufacturer Part#: |
IRF9530S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 12A D2PAK |
More Detail: | P-Channel 100V 12A (Tc) 3.7W (Ta), 88W (Tc) Surfac... |
DataSheet: | IRF9530S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 88W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 7.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF9530S is an extremely fast N-channel MOSFET which is an optimized version of IRF9530. It is designed to operate at very high speeds and extremely low gate drive. IRF9530S provides very low RDS(on) and low gate charge. This makes it perfect for high-frequency switching applications. Let’s have a look at the application field and working principle of IRF9530S.
Application Field
IRF9530S can be used in a wide range of applications. First of all, it can be used in power switching regulators, DC operators, motor controls, relays and switches, SCR/diode replacements and high-speed power switches. It can also be used in converters, inverters, telecommunications applications, rectifiers, UPS and many other high-speed switching systems.
IRF9530S is ideal for use in high-frequency switching applications where low gate drive is required. It is suitable for applications that require fast switching, high current, and efficient operation with low power consumption. These characteristics make it the ideal choice for use in high-speed switching applications.
Working Principle
The IRF9530S is a N-channel MOSFET which has an insulated gate and uses voltage to control the flow of current. When voltage is applied to the gate, the channels between the source and drain open and allow current to flow through the device. The gates are built using metal-oxide semiconductor technology. The gates are insulated by an oxide layer, which prevents any current from flowing from the gate to the drain.
The IRF9530S has an extremely fast switching time and an extremely low input capacitance. This makes it ideal for applications where fast switching is desired. Furthermore, it has low RDS(on) and low gate charge which makes it ideal for high-frequency switching applications.
The IRF9530S is easy to use and does not require any special circuitry for operation. The device can be connected directly to the circuit and requires only basic knowledge of electronics to operate. Additionally, the device is very versatile and can be used in a variety of applications.
Conclusion
In conclusion, the IRF9530S is an extremely fast N-channel MOSFET which is perfect for high-speed switching applications. It has a low RDS(on) and low gate charge which makes it ideal for high-frequency switching applications. It can be used in power switching regulators, DC operators, motor controls, relays and switches, SCR/diode replacements and high-speed power switches. Additionally, it is easy to use and does not require any special circuitry for operation.
The specific data is subject to PDF, and the above content is for reference
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