| Allicdata Part #: | IRF9956TR-ND |
| Manufacturer Part#: |
IRF9956TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET 2N-CH 30V 3.5A 8-SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 3.5A 2W Surfac... |
| DataSheet: | IRF9956TR Datasheet/PDF |
| Quantity: | 1000 |
| Series: | HEXFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 3.5A |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 15V |
| Power - Max: | 2W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
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IRF9956TR Application Field and Working Principle
Transistors are three-terminal devices used to amplify and switch signals and electrical power. The IRF9956TR is a type of power field-effect transistor (FET). It belongs to the Arrays family of FETs, MOSFETs (metal-oxide-semiconductor field-effect transistor) in particular. This type of transistor can be found in a variety of circuits such as amplifiers, phase correctors, and digital switching systems, among others.
The power FET IRF9956TR is especially designed for applications that require high switching speeds, high power handling and low on-resistance. With its large current carrying capacity, it can be used in power supplies, motor drives, switching regulators, etc. It is also used as a voltage regulator in some electrical systems.
Design
The IRF9956TR is a dual N-channel power MOSFET in an insulated metal substrate (IMS). It is quite small, measuring only 4.7mm x 8.0 mm, and yet can deliver an impressive power rating of up to 30W (at Tc = 25°C). It has a drain-to-source breakdown voltage of 600V and its drain-source on-resistance is only 0.01Ω (max.). The MOSFET also has an operating temperature range of -55°Cto 150°C.
Working Principle
Power MOSFETs, including the IRF9956TR, are semiconductor devices that use the MOSFET principle to control the flow of current through them. This principle works by applying a voltage across the gate and the source of the MOSFET. This triggers the MOSFET to turn on or off by changing the resistance between the gate and the source. This allows current to flow through the drain and the source of the MOSFET, thus controlling the current that flows.
The working principle of the IRF9956TR MOSFET can be best explained with the help of an example. Suppose a power supply is connected to a load that includes a DC motor. To keep the motor running, a switch must be activated to send current to the motor. By using the IRF9956TR MOSFET, the voltage applied across the gate and source of the MOSFET can control the resistance between the gate and source, thus increasing or decreasing the amount of current that flows to the motor.
Applications
The IRF9956TR MOSFET is suitable for a wide range of applications. It can be used in power supplies, motor drives, switching regulators, motor speed controls, and voltage regulators. It is also suitable for use in amplifiers, phase correctors, digital switching systems and other power applications where high power and high switching speeds are required.
Aside from these, the IRF9956TR can also be used in other application fields like discrete and integrated circuit development, electronic sensing and measurement devices, optoelectronic switches, and medical equipment.
Advantages
The advantages of the IRF9956TR MOSFET include its small size, low cost, and high power handling capabilities. It is also very reliable with a high breakdown voltage and low on-resistance, making it suitable for a wide range of applications. Furthermore, its ability to switch high currents quickly makes it an ideal choice for many industrial applications.
Disadvantages
The major disadvantage of the IRF9956TR MOSFET is that it tends to produce more thermal noise than other types of transistors. Also, the small size of the device makes it more difficult to handle and assemble than other types of transistors.
Overall, the IRF9956TR is a versatile power FET that can be used in a variety of applications. Its proven reliability and efficient performance make it a great choice for many different electronic applications.
The specific data is subject to PDF, and the above content is for reference
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IRF9956TR Datasheet/PDF