Allicdata Part #: | IRF9610-ND |
Manufacturer Part#: |
IRF9610 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 200V 1.8A TO-220AB |
More Detail: | P-Channel 200V 1.8A (Tc) 20W (Tc) Through Hole TO-... |
DataSheet: | IRF9610 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF9610 is a N-ChannelEnhancedModeMosfet,which offers advancetime, gatechargeandthermalcharacteristics. It has been designed to be self ProtectedandoptimizedforveryLowThresholdDrivingVoltage. This model is widely used in various applications of voltage and power control in industrial and consumer areas.
The main features of the IRF9610 include a maximum drain-source voltage of 30V, drain-source current of 4A, on-resistance of 0.018 Ω and agate-source voltage of 30V. This model was designed for high-side and low-side applications, with a high-temperature of 175°C maximum, and a maximum operating temperature of -55°C.
TheWorkingPrincipleoftheIRF9610involves a number of processes. Firstly, the Gate of N-ChannelMOSFETisconnectedtosource. Whenanegativepotentialappliestothegate, the gap between the gate and source will be charged up, creating a depletion region. This causes the electron density to increase, and a depletion layer to be created. This depletion layer will, in turn, increase the voltage between the source and drain.
Secondly, analternatingcurrent(AC)ispassedthroughtheload. Then, the AC current converts to direct current when it passes through the gate and sources. Finally, with the conductivity of the MOSFET, the voltage between the source and drain increases, allowing the current to pass through and controlling the load.
TheIRF9610canbeusedinvariousapplicationssuchaspowercontrol, DC motor control, automotive relays, lighting control, motor drives and other similar applications. It is used in amplifier circuits because of its ability to handle extremelyhighfrequencieswithoutanydegradation.TheIRF9610alsohasverylowthresholddrivingvoltage,whichmakesitidealtobedrivenbyalmostanytypeofvoltagesourcethemicrocontrollerorprocessor.Moreover,itoffersaferSolutioninpowercontrolApplicationswhileconsumingmuchlesspowerthanconventionaltransistors.
In conclusion, the IRF9610 is an ideal solution for low voltage power control and provides higher levels of efficiency and reliability. Its features and design make it suitable for various types of applications, ranging from consumer electronics to industrial applications. Despite its small size, the IRF9610 can offer the same performance and efficiency as traditional transistors, and can even outperform them in certain applications.
The specific data is subject to PDF, and the above content is for reference
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IRF9530S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
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