Allicdata Part #: | IRF9Z24SPBF-ND |
Manufacturer Part#: |
IRF9Z24SPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 11A D2PAK |
More Detail: | P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface... |
DataSheet: | IRF9Z24SPBF Datasheet/PDF |
Quantity: | 288 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF9Z24SPBF is a single N-Channel enhancement-mode field effect transistor (FET) designed for power switching applications. It is designed to minimize the on-state resistance and features a high transconductance for fast switching performance. The IRF9Z24SPBF is able to handle currents up to 14 amp and feature a maximum of 100 Watt power dissipation.
The IRF9Z24SPBF is a compact FET transistor. It is a surface-mountable device, which allows it to be incorporated into a variety of configurations. The IRF9Z24SPBF also has a high switching frequency, which can optimize performance in many applications.
The IRF9Z24SPBF is a versatile transistor and can be used in a variety of applications. An example of an application where the IRF9Z24SPBF can be used is in DC/DC converters. The IRF9Z24SPBF can be used as a switch-mode enhancement FET, providing an efficient and fast switching performance to the converter.
In addition, the IRF9Z24SPBF can be used to control the on/off state of a load. It can be used to switch mechanical relays, or to control power MOSFETs. In other applications where higher power levels are needed, the IRF9Z24SPBF can be used in a parallel configuration to increase its power handling capability.
The IRF9Z24SPBF has a specific operating principle by which it functions. The IRF9Z24SPBF has a gate, a drain, and a source. When a voltage is applied to the gate, the transistor will conduct current between the drain and the source. The more voltage is applied to the gate, the higher the current that will flow. This is known as the enhancement-mode operation of the FET.
The IRF9Z24SPBF has a wide drain-to-source voltage range, ranging from 0 – 18V, allowing it to handle wide voltage swings while remaining within its safe operating area. In addition, the IRF9Z24SPBF features temperature sensing characteristics, making it suitable for applications that require temperature management. The device’s current handling capabilities allow it to be used in power supplies and other power applications.
The IRF9Z24SPBF is a reliable device with a wide range of applications. It is suitable for use in power switching, DC/DC converter switching operations and load control. In addition, the IRF9Z24SPBF is suitable for use in temperature sensing applications. This FET transistor is a cost-efficient and reliable device that can provide fast and efficient switching solutions for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IRF9520 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 6.8A TO-... |
IRF9610 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A TO-... |
IRF9530 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A TO-2... |
IRF9620 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 3.5A TO-... |
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