IRF9520NPBF Allicdata Electronics
Allicdata Part #:

IRF9520NPBF-ND

Manufacturer Part#:

IRF9520NPBF

Price: $ 0.82
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 100V 6.8A TO-220AB
More Detail: P-Channel 100V 6.8A (Tc) Through Hole TO-220AB
DataSheet: IRF9520NPBF datasheetIRF9520NPBF Datasheet/PDF
Quantity: 1048
1 +: $ 0.82000
10 +: $ 0.79540
100 +: $ 0.77900
1000 +: $ 0.76260
10000 +: $ 0.73800
Stock 1048Can Ship Immediately
$ 0.82
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
FET Feature: --
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A Field effect transistor (FET) is a type of transistor that works by controlling the movement of electrons across a semiconductor material in order to create an output signal. The IRF9520NPBF is a type of single N-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with an internal source-drain diode. This type of MOSFET has a particularly wide range of applications, ranging from switching circuits, motor control and power conversion, to the high frequency modulation of RF signals in radio and telecom devices.

The IRF9520NPBF has a particular feature set that makes it useful for its range of applications. It has a high Current transfer ratio, making it suitable for power switching as it can handle up to 96 Amps of current with a peak value of 180A. It has a relatively low on-resistance at only 0.25 ohms, meaning that it can handle high frequency signals due to its low voltage drop. This makes it particularly suitable for radio and telecom applications. It also has a low gate-to-source threshold voltage of only 1.9V, making it easier to switch on and off with logic signals at lower voltages.

The IRF9520NPBF works on the principle of an enhancement-mode MOSFET, meaning that its current flow is controlled by the voltage applied to the Gate. When the voltage applied to the gate is low, the current through the channel is also low. However, when a higher voltage is applied to the gate, current increases through the channel from the Drain to the Source, allowing power to flow through the transistor. This is the basis for using MOSFETs as switching elements, as the transistor can be turned off or on simply by changing the voltage applied to the gate.

The IRF9520NPBF is an extremely versatile device, with a range of applications in power switching, motor control, RF signal modulation and more. Its unique feature set, consisting of high current transfer ratio, low on-resistance and low gate-to-source threshold, makes it particularly suitable for these applications. In conclusion, the IRF9520NPBF is an ideal choice for any application needing to switch power and/or RF signals with the aid of an enhancement-mode MOSFET.

The specific data is subject to PDF, and the above content is for reference

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