IRF9540NL Allicdata Electronics
Allicdata Part #:

IRF9540NL-ND

Manufacturer Part#:

IRF9540NL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 100V 23A TO-262
More Detail: P-Channel 100V 23A (Tc) 3.8W (Ta), 140W (Tc) Throu...
DataSheet: IRF9540NL datasheetIRF9540NL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 117 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF9540NL is a silicon enhancement-mode Power MOSFET that is capable of delivering high continuous drain current and can operate at very low drain-to-source voltages. This power MOSFET has been designed to provide excellent switching performance and is suitable for a wide range of applications such as powerrelated circuits and voltage regulation. This MOSFET can switch at very high speeds, making it an ideal choice for many digital circuits.

The IRF9540NL power MOSFET is a single N-channel device with a drain-source voltage rating of 30 volts and a maximum drain current of 12 amps. It has an additional feature which makes it suitable for switching applications where high speed operation is required – the low drain-to-source capacitance of the device. The low capacitance means that the device can switch at up to 20MHz, making it ideal for use in high switching speed applications.

The IRF9540NL is built using a vertical DMOS construction, which means that it has excellent blocking performance and can handle a wide range of drain to source and source to drain voltages. The device also features a maximum breakdown voltage (BVDSS) of 30V and an on-resistance of 0.11 ohm. This allows it to handle very high current and to provide excellent switching performance.

The working principle behind the IRF9540NL is relatively simple. When the gate voltage is low, the MOSFET is off, meaning no current is able to flow through it. When the gate voltage is increased, the channel of the MOSFET opens, meaning current is allowed to flow from the drain to the source. The amount of current which can flow is determined by the gate voltage and the resistance from the drain to the source.

The IRF9540NL has a wide range of applications, and is commonly used for switching and regulating power in various electronic circuits. It is also suitable for use in power management systems, voltage regulation systems, and for driving relays and motors. The device is also commonly used in the automotive industry, for controlling power in LED lighting and for driving solenoids.

In summary, the IRF9540NL is a single N-channel power MOSFET which is suitable for a wide range of applications. It is capable of supplying high continuous drain current and can switch at very high speeds. The device also features a low drain-to-source capacitance, making it a great choice for digital circuits which require high speed operation.

The specific data is subject to PDF, and the above content is for reference

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