IRF9640LPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3W (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	500 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

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< p > IRF9640LPBF is a MOSFET commonly used in industrial and commercial applications. It is a type of field-effect transistor (FET), which is a component which uses the charge of an electric field to regulate the current flow in a circuit. It is often used as a switch to control the output power of a circuit, or as a amplifier to boost the strength of a signal. < p >The IRF9640LPBF is a single-source MOSFET, meaning that it only requires one current or voltage source to be opened or closed. It is composed of three separate components: the gate, drain, and source. The gate is a voltage-controlled terminal, the drain is a current-carrying terminal, and the source is a reference terminal against which the other two terminals are measured. The transistor consists of two pairs of terminals: an internal pair, referred to as gate-source, and an external pair, referred to as gate-drain. When the voltage on the gate terminal is increased, a large electric field is created between the gate and source terminals, which causes the current to flow between the source and the drain. This is known as the enhancement mode, because the current flow is increased due to the electric field. On the other hand, when the voltage between the gate-source is decreased, a depletion mode is activated and the current flow between the source and drain is reduced.The IRF9640LPBF is commonly used as a switch in various circuits and as an amplifier in audio and RF applications. It is also used in power supplies, motor control, data processing, and other applications requiring high-current switching. The device has a low gate threshold voltage, low on-resistance, and low gate capacitance, making it ideal for use in high-frequency circuits. This MOSFET is also designed to operate at high temperatures, making it suitable for industrial and commercial applications.The IRF9640LPBF is easy to use and configure. It is usually controlled by a gate voltage, which must be connected to the gate terminal. The device can also be triggered by other signals such as signals from oscillators or logic chips. The gate voltage controls the current flow between the source and the drain, and can be adjusted by changing the voltage or the current.The IRF9640LPBF is a reliable and efficient semiconductor device which is widely used in various applications. It has low on-resistance and low gate capacitance which make it ideal for high-frequency circuits. It is easy to use and configure, and can be controlled by various external signals. The device is also designed to operate at high temperatures, making it suitable for industrial and commercial applications.

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