| Allicdata Part #: | IRF9540SPBF-ND |
| Manufacturer Part#: |
IRF9540SPBF |
| Price: | $ 3.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 100V 19A D2PAK |
| More Detail: | P-Channel 100V 19A (Tc) 3.7W (Ta), 150W (Tc) Surfa... |
| DataSheet: | IRF9540SPBF Datasheet/PDF |
| Quantity: | 923 |
| 1 +: | $ 3.04000 |
| 10 +: | $ 2.94880 |
| 100 +: | $ 2.88800 |
| 1000 +: | $ 2.82720 |
| 10000 +: | $ 2.73600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.7W (Ta), 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 61nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRF9540SPBF Application Field and Working Principle
IRF9540SPBF is a vertical N-Channel Power MOSFET which has the Pb-Free package. It is specifically designed to minimize power losses and to maximize system efficiency in electronic circuits. The operation of this kind of MOSFET device combines the characteristics of a traditional field-effect transistor, or FET, with the voltage-controlled operation of a metal-oxide semiconductor, or MOS. When used in certain types of digital circuits, the IRF9540SPBF can provide reasonable power dissipation, low on-resistance, and a wide range of gate drive compatibility. As such, it is widely used in the area of power management, motor control, and shifting applications where the need to minimize power loss and can be used save on circuit board space. Additionally, its superior performance makes the IRF9540SPBF a very important component in many applications.
Working Principle of IRF9540SPBF
The operating principle of the IRF9540SPBF is similar to that of a common insulated gate field-effect transistor, or IGBT. Like its relative, it also uses a metal-oxide semiconductor, or MOS, gate to control the current flow through the device. The device\'s internal structure consists of two main sections. The first section, called the source gate, is the location of the current flow source, while the second section, called the drain gate, is the location of the current flow destination. Between the two sections is the gate oxide layer, which is insulating and provides the required gate voltage control.
When the gate voltage above the gate oxide layer is increased enough, a phenomenon called "tunnelling effect" occurs and electrons start to pass through the oxide layer, creating a direct path between the source and the drain. Meanwhile, since the oxide layer itself does not allow the current to flow directly, the current can be controlled by adjusting the gate voltage. Thus, when the gate voltage is raised above the threshold level, the IRF9540SPBF turns on and a current starts to flow from the source to the drain. On the other hand, when the gate voltage is reduced below the threshold level, the MOSFET turns off and the current flow is stopped.
Application Fields of IRF9540SPBF
The application fields of IRF9540SPBF are mainly in the areas of power management, motor control, and shifting applications. It is an ideal device in applications that require low on-resistance and wide range of gate drive compatibility. With its superior performance, the IRF9540SPBF can provide reasonable power dissipation, reduces power loss and also helps to save on circuit board areas.These MOS devices are also used in high voltage and high frequency applications, such as rectifier, full bridges, P-channel, N- channel, and battery backup systems. It is also used in digital logic and power processing applications. Furthermore, due to its lightweight structure, the IRF9540SPBF is widely used in the automobile industry and in remote-control applications.
Conclusion
The IRF9540SPBF is a vertical N-Channel Power MOSFET whose operation combines the characteristics of a traditional FET and the voltage-controlled operation of a MOS. It is an ideal device for power management, motor control, and shifting applications due to its superior performance and reasonable power dissipation. It has a wide range of application fields ranging from high voltage, high frequency applications to digital logic systems in the automobile industry and in remote-control applications. Thus, the IRF9540SPBF is a very important component used in various applications today.
The specific data is subject to PDF, and the above content is for reference
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IRF9540SPBF Datasheet/PDF