IRF9952PBF

Vgs(th) (Max) @ Id:	1V @ 250µA
Base Part Number:	IRF9952PBF
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	2W
Input Capacitance (Ciss) (Max) @ Vds:	190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	100 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C:	3.5A, 2.3A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	N and P-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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The IRF9952PBF is an advanced form of MOSFET array, which is widely used for analog and digital applications. It is an insulated-gate bipolar transistor (IGBT) array that features a low on-resistance of just 0.3 ohms typical. The IRF9952PBF has two transistors, one n-channel and one p-channel, connected in parallel. This enables high switching speed, current ratings of 2 amperes (A), and an operating temperature range of -55°C to 150°C.The IRF9952PBF is commonly used in a variety of applications such as motor control, power switching, and power conversion. The low on-resistance of the transistor, combined with a wide operating temperature range makes it an ideal choice for high-frequency switching applications. It is also often used in automotive applications, where its low power losses increase the efficiency of the system. Additionally, the FN8 package of the IRF9952PBF provides excellent thermal performance and is able to tolerate high current transients, which makes it highly suitable for applications that require fast switching times.When it comes to operation, the IRF9952PBF has two gate terminals, one for the n-channel transistor and the other for the p-channel transistor. The gate terminals are used to turn the transistors on or off. Voltage applied to the gate terminals controls the current flow through the transistors. When the voltage applied to the gate terminal is below the threshold voltage, no current can flow through the transistors. On the other hand, when the voltage applied to the gate terminal is over the threshold voltage, current can flow through the transistors. The positive gate voltage turns the n-channel transistor on while the negative gate voltage turns off the n-channel transistor. The p-channel transistor will have the reverse operation.In terms of output characteristics, the IRF9952PBF is able to provide high-speed switching and low power losses. The capacitor-coupled circuit of the device helps reduce power losses by minimizing switching delays and overshoots. Furthermore, the device has low on-resistance, which reduces heat generation and helps maintain operating temperature ranges. Also, the thermal regulation feature ensures that the device’s thermal performance remains optimal when the operating temperature increases.Overall, the IRF9952PBF is an advanced form of MOSFET array that delivers high-speed switching and low power losses. Its wide operating temperature range, low on-resistance, and thermal regulation feature make it an ideal choice for a variety of applications, including automotive and power switching services. The low on-resistance and capacitor-coupled circuit also help increase the efficiency of the device, while the FN8 package ensures excellent thermal performance. The IRF9952PBF is suitable for applications including motor control, power related, and digital applications where high-speed switching and low power losses are required. It is also suitable for automotive and power related services due its wide operating temperature range, low on-resistance, thermal regulation feature and the FN8 package that guarantees great thermal performance.

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