IRF9952QTRPBF

Vgs(th) (Max) @ Id:	1V @ 250µA
Base Part Number:	IRF9952QPBF
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	2W
Input Capacitance (Ciss) (Max) @ Vds:	190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	100 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C:	3.5A, 2.3A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Logic Level Gate
FET Type:	N and P-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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IRF9952QTRPBF Application Field and Working Principle The IRF9952QTRPBF is a high-speed dual N-channel logic level MOSFET array designed in a special intregated-circuit package that provides improved conduction loss and power dissipation performance. The device is offered in a 16-pin e-PAD Exposed Pad quad flat no-lead (ePAD QFN) package which is ideal for high-density surface-mount applications. It is designed to replace two separate single N-channel MOSFETs and features an enhancement mode design which offers improved switching performance over discrete componentsApplications The IRF9952QTRPBF is ideal for applications involving power sequencing, motor control, low-cost prototypes and motor control. It is suitable for use where low on-resistance and fast switching are required. The device is also suitable for use in applications where heat dissipation is a consideration, as the exposed pad allows better heat spreading. Features The IRF9952QTRPBF offers a wide range of features, including: • Integrated ESD and latch-up protection • High-speed switching • Low on-resistance • Low power dissipation • High reliability • Wide gate voltage range Working Principle The IRF9952QTRPBF is designed to work by using an Enhancement Mode MOSFET. An Enhancement Mode MOSFET is an N-type MOSFET which operates by allowing an increase in current to flow through the device when a voltage is applied to the gate of the device. This voltage must exceed a certain threshold voltage (VGS) to “turn on” the MOSFET, which results in current flowing. At the same time, the capacitor connected to the gate will be charged and the voltage across the drain-source terminals increases. When the voltage across the drain-source terminals reaches a certain value, the current through the transistor will decrease and the voltage on the drain-source terminals will begin to decrease as well. When the voltage across the drain-source terminals reaches the threshold voltage, the current will start to decrease rapidly and the device will become “off”, resulting in the drain-source voltage returning to zero. The IRF9952QTRPBF also offers protection against Electrostatic Discharge (ESD) and latch-up protection, by providing an integrated ESD protection network which can absorb up to 2000 volts of transient ESD energy, and a latch-up protection circuit which prevents destructive latch-up currents from flowing in the device. Conclusion The IRF9952QTRPBF is an ideal device for applications requiring fast switching, low power dissipation, and high reliability. It is a high-speed dual N-channel logic level MOSFET array designed in a special integrated package which provides improved conduction loss and power dissipation performance. The device offers a wide range of features and protection against Electrostatic Discharge (ESD) and latch-up. It is ideal for applications involving power sequencing, motor control, low-cost prototypes and motor control.

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